Journal
MATERIALS
Volume 12, Issue 7, Pages -Publisher
MDPI
DOI: 10.3390/ma12071102
Keywords
colossal permittivity; single-crystalline silicon plate; thermal oxidation
Categories
Funding
- National Natural Science Foundation of China [51272166]
- Priority Academic Program Development of Jiangsu Higher Education Institutions (PAPD)
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In this work, thin SiO2 insulating layers were generated on the top and bottom surfaces of single-crystalline silicon plates (n type) by thermal oxidation to obtain an insulator/semiconductor/insulator (ISI) multilayer structure. X-ray diffraction (XRD) pattern and scanning electron microscope (SEM) pictures implied that all of the synthesized SiO2 layers were amorphous. By controlling the thermal oxidation times, we obtained SiO2 layers with various thicknesses. The dielectric properties of silicon plates with different thicknesses of SiO2 layers (different thermal oxidation times) were measured. The dielectric properties of all of the single-crystalline silicon plates improved greatly after thermal oxidation. The dielectric constant of the silicon plates with SiO2 layers was approximately 10(4), which was approximately three orders more than that of the intrinsic single-crystalline silicon plate (11.9). Furthermore, both high permittivity and low dielectric loss (0.02) were simultaneously achieved in the single-crystalline silicon plates after thermal oxidation (ISI structure).
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