Journal
TECHNICAL PHYSICS LETTERS
Volume 45, Issue 2, Pages 108-110Publisher
MAIK NAUKA/INTERPERIODICA/SPRINGER
DOI: 10.1134/S1063785019020068
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Funding
- State Program of Scientific Research of the Republic of Belarus Convergence [3.2.04]
- State Program of Scientific Research of the Republic of Belarus Photonics, Opto-, and Microelectronics [2.1.02]
- State Program of Scientific Research of the Republic of Belarus Physical Materials Science, New Materials, and Technologies [2.21]
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We have synthesized oxygen-doped graphite-like carbon nitride (g-C3N4) by the thermal treatment of the thiourea at 450-550 degrees C. With an increase in the annealing temperature, the oxygen concentration in g-C3N4 increases, and the band-gap of the material decreases from 2.64 to 2.47 eV. The semiconductor properties of g-C3N4 doped with oxygen are confirmed by its high photocatalytic activity, determined by decoloration of a Rhodamine B aqueous solution in the presence of g-C3N4 upon irradiation with visible light.
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