Analysis of current transport mechanisms in sol-gel grown Si/ZnO heterojunction diodes in high temperature environment

Title
Analysis of current transport mechanisms in sol-gel grown Si/ZnO heterojunction diodes in high temperature environment
Authors
Keywords
Semiconductor thin film, Heterojunction diode, Current-voltage characteristics, Trap-assisted tunneling, Spatial barrier inhomogeneities, Richardson constant
Journal
SUPERLATTICES AND MICROSTRUCTURES
Volume 128, Issue -, Pages 48-55
Publisher
Elsevier BV
Online
2019-01-17
DOI
10.1016/j.spmi.2019.01.013

Ask authors/readers for more resources

Reprint

Contact the author

Publish scientific posters with Peeref

Peeref publishes scientific posters from all research disciplines. Our Diamond Open Access policy means free access to content and no publication fees for authors.

Learn More

Create your own webinar

Interested in hosting your own webinar? Check the schedule and propose your idea to the Peeref Content Team.

Create Now