Journal
SCRIPTA MATERIALIA
Volume 164, Issue -, Pages 25-29Publisher
PERGAMON-ELSEVIER SCIENCE LTD
DOI: 10.1016/j.scriptamat.2019.01.035
Keywords
High thermal stability; Fast speed; Ge-Sb-Te alloys; Phase change memory
Categories
Funding
- National Key Research and Development Program of China [2017YFA0206101, 2017YFB0701703, 2017YFA0206104, 2018YFB0407500, SQ2017YFGX020134]
- Strategic Priority Research Programof the Chinese Academy of Sciences [XDPB12]
- National Natural Science Foundation of China [61874129, 61874178, 61504157, 61622408]
- Science and Technology Council of Shanghai [17DZ2291300, 18DZ2272800]
- Zhejiang Provincial Natural Science Foundation of China [LQ19F040008]
Ask authors/readers for more resources
Phase change materials along the GeTe-Sb isoelectronic tie line are proved to be promising host material for optimization, based on which the well-known golden composition is developed. Here, Sc doped Ge2Sb1Te2 has been proposed for phase change memory (PCM) application, showing higher thermal stability and faster operation speed than those of the golden composition. The fast speed of 40 ns, high 10-year data retention of 160 degrees C, and good endurance of 6x10(5) cycles have made Sc0.2Ge2Sb1Te2 a promising candidate for PCM application. The impact of Sc on the microstructure is believed to be essential for those improvements in PCM. (C) 2019 Acta Materialia Inc. Published by Elsevier Ltd. All rights reserved.
Authors
I am an author on this paper
Click your name to claim this paper and add it to your profile.
Reviews
Recommended
No Data Available
Share Paper
