Write once read many times resistance switching memory based on all-inorganic perovskite CsPbBr3 quantum dot

Published 2019 View Full Article

  1. Home
  2. Publications
  3. Publication Search
  4. Publication Details
Title
Write once read many times resistance switching memory based on all-inorganic perovskite CsPbBr3 quantum dot
Authors
Keywords
Semiconductor, CsPbBr, 3, quantum dots, Resistive switching memory, Electronic material
Journal
OPTICAL MATERIALS
Volume 90, Issue -, Pages 123-126
Publisher
Elsevier BV
Online
2019-03-06
DOI
10.1016/j.optmat.2019.01.069

Ask authors/readers for more resources

Protocol

Community support

Reagent

Community support

Reprint

Contact the author

Find the ideal target journal for your manuscript

Explore over 38,000 international journals covering a vast array of academic fields.

Search

Become a Peeref-certified reviewer

The Peeref Institute provides free reviewer training that teaches the core competencies of the academic peer review process.

Get Started
Webinars Posters Questions Hubs Funding Journals Articles Connect Collections Reviewers About Us FAQs Mobile App Privacy Policy Terms of Use
© Peeref 2019-2024. All rights reserved.