Reduced interfacial fluctuation leading enhanced mobility in a monolayer MoS2 DG FET under low vertical electric field

Published 2019 View Full Article

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Title
Reduced interfacial fluctuation leading enhanced mobility in a monolayer MoS2 DG FET under low vertical electric field
Authors
Keywords
-
Journal
NANOTECHNOLOGY
Volume -, Issue -, Pages -
Publisher
IOP Publishing
Online
2019-05-04
DOI
10.1088/1361-6528/ab1f36

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