4.6 Article

Ultrafast exciton transfer in perovskite CsPbBr3 quantum dots and topological insulator Bi2Se3 film heterostructure

Journal

NANOTECHNOLOGY
Volume 30, Issue 32, Pages -

Publisher

IOP PUBLISHING LTD
DOI: 10.1088/1361-6528/ab166f

Keywords

topological insulator; perovskite; heterostructure; energy transfer; ultrafast measurement

Funding

  1. National Natural Science Foundation (NSF) of China [11802339, 11805276, 11804387, 61805282, 61801498]
  2. Scientific Researches Foundation of National University of Defense Technology [ZK16-03-59, ZK18-01-03, ZK18-03-36, ZK18-03-22]
  3. NSF of Hunan province [2016JJ1021]
  4. Open Director Fund of State Key Laboratory of Pulsed Power Laser Technology [SKL2018ZR05]
  5. Open Research Fund of Hunan Provincial Key Laboratory of High Energy Technology [GNJGJS03]
  6. Opening Foundation of State Key Laboratory of Laser Interaction with Matter [SKLLIM1702]
  7. Youth talent lifting project [17-JCJQ-QT-004]

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Recently, topological insulator based heterostructures (HSs) have attracted tremendous research interest, due to their efficient carrier transfer features at the heterointerface induced by metallic surface states. Here, a novel HS comprising 0D perovskite CsPbBr3 quantum dots (QDs) and 2D material topological insulator Bi2Se3 film is proposed and experimentally investigated. Specifically, steady state and time-resolved photoluminescence (PL) measurements are employed, from which a significant quenching behaviour is observed in the HS, with an average quenching factor of 93.2 +/- 0.8%. Additionally, time-resolved PL spectroscopy affirms that the carrier transfer efficiency can be up to 92.6 +/- 0.2%. Furthermore, the dynamics of carrier transfer within the 0D-2D HS are characterized by utilizing femtosecond broadband transient absorption (TA) spectroscopy, revealing an ultrafast exciton transfer from photoexcited CsPbBr3 QDs to the Bi2Se3 film with a time-scale around 1.1 +/- 0.2 ps. An alternative important finding is that the band renormalization is exhibited in CsPbBr3 QDs of the HS, with the dominant factor being the Coulomb screening effect. This work is expected to provide some fundamental understanding of the ultrafast and efficient carrier transfer mechanism underneath HSs based on topological insulators.

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