4.8 Article

Exceptionally High, Strongly Temperature Dependent, Spin Hall Conductivity of SrRuO3

Journal

NANO LETTERS
Volume 19, Issue 6, Pages 3663-3670

Publisher

AMER CHEMICAL SOC
DOI: 10.1021/acs.nanolett.9b00729

Keywords

complex oxide heterostructures; spin-orbit torques; spin Hall conductivity; intrinsic spin Hall effect

Funding

  1. NSF MRSEC program [DMR-1719875]
  2. NSF [ECCS-1542081]
  3. Nano-Electronics Lab of the Samsung Advanced Institute of Technology
  4. W.M. Keck Foundation
  5. National Science Foundation (Platform for the Accelerated Realization, Analysis, and Discovery of Interface Materials (PARADIM)) [DMR-1539918]
  6. Department of Energy [DE-SC0002334]
  7. U.S. Department of Energy (DOE) [DE-SC0002334] Funding Source: U.S. Department of Energy (DOE)

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Spin-orbit torques (SOT) in thin film heterostructures originate from strong spin-orbit interactions (SOI) that, in the bulk, generate a spin current due either to extrinsic spin-dependent, skew, or/and side-jump scattering or to intrinsic Berry curvature in the conduction bands. While most SOT studies have focused on materials with heavy metal components, the oxide perovskite SrRuO3 has been predicted to have a pronounced Berry curvature. Through quantification of its spin current by the SOT exerted on an adjacent Co ferromagnetic layer, we determine that SrRuO3 has a strongly temperature (T)-dependent spin Hall conductivity sigma(SH), increasing with the electrical conductivity, consistent with expected behavior of the intrinsic effect in the dirty metal regime. sigma(SH) is very high T, e.g., sigma(SH >)((h) over bar /2e)3 x 10(5) Omega(-1)m(-1) at 60 K, and is largely unaffected by the SrRuO3 ferromagnetic transition at T-c approximate to 150 K, which agrees with a recent theoretical determination that the intrinsic spin Hall effect is magnetization independent. Below T, smaller nonstandard SOT components also develop associated with the magnetism of the oxide. Our results are consistent with the degree of RuO6 octahedral tilt being correlated with the strength of the SOI in this complex oxide, as predicted by recent theoretical work on strontium iridate. These results establish SrRuO3 as a very promising candidate material for implementing strong spintronics functionalities in oxide electronics.

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