Degradation Assessment and Precursor Identification for SiC MOSFETs Under High Temp Cycling

Published 2019 View Full Article

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Title
Degradation Assessment and Precursor Identification for SiC MOSFETs Under High Temp Cycling
Authors
Keywords
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Journal
IEEE TRANSACTIONS ON INDUSTRY APPLICATIONS
Volume 55, Issue 3, Pages 2858-2867
Publisher
Institute of Electrical and Electronics Engineers (IEEE)
Online
2019-01-09
DOI
10.1109/tia.2019.2891214

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