Tuning electronic properties of InSe/arsenene heterostructure by external electric field and uniaxial strain

Published 2018 View Full Article

Authors

Keywords

InSe/arsenene heterostructure, Band gap, Electronic properties, External electric field, Uniaxial strain

Journal

APPLIED SURFACE SCIENCE

Volume 475, Issue -, Pages 839-846

Publisher

Elsevier BV

Online

2018-12-24

DOI

10.1016/j.apsusc.2018.12.135

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