Article
Multidisciplinary Sciences
D. J. Sanchez-Trujillo, L. V. Osorio-Maldonado, J. J. Prias-Barragan
Summary: The electrical conductivity of graphene oxide films was studied and found to increase with temperature, exhibiting semiconductor-like behavior. This study provides a foundation for the development of graphene oxide films with high conductivity.
SCIENTIFIC REPORTS
(2023)
Article
Nanoscience & Nanotechnology
Jianfei Huang, Hoang Mai Luong, Jaewon Lee, Sangmin Chae, Ahra Yi, Zhong-Ze Qu, Zhifang Du, Dylan G. Choi, Hyo Jung Kim, Thuc-Quyen Nguyen
Summary: Organic photodetectors processed with environmentally benign solvent o-xylene exhibit broad activity. The devices, using PBDB-T polymer donor and CO1-4F non-fullerene acceptor, are dissolved in o-xylene at controlled temperature. The o-xylene processed devices show an external quantum efficiency up to 70%, surpassing chlorobenzene processed counterparts, and have characteristics of suppressed dark current and high specific detectivity within practical operation frequencies.
ACS APPLIED MATERIALS & INTERFACES
(2023)
Article
Chemistry, Multidisciplinary
Jun-Jie Wang, Can Fu, Hai-Yang Cheng, Xiao-Wei Tong, Zhi-Xiang Zhang, Di Wu, Li-Miao Chen, Feng-Xia Liang, Lin-Bao Luo
Summary: The study introduces a non-wide band gap semiconductor ultraviolet photodetector utilizing silicon nanowire arrays, which exhibit sensitivity to UV light but insensitivity to visible and infrared light. This novel device shows promise for sensitive UV photodetectors, with characteristics comparable to or even better than traditional wide band gap semiconductor devices.
Article
Chemistry, Multidisciplinary
Tae Jin Yoo, Wan Sik Kim, Kyoung Eun Chang, Cihyun Kim, Min Gyu Kwon, Ji Young Jo, Byoung Hun Lee
Summary: A graphene photodetector decorated with Bi2Te3 nanowires demonstrated high gain and wide bandwidth window. The photoconductive gain was significantly improved compared to a graphene/Bi2Te3 nanoplate junction, and the position of photocurrent generation was investigated. By utilizing low bandgap Bi2Te3 nanowires and a graphene junction, the photoresponsivity was increased effectively.
Article
Multidisciplinary Sciences
Christopher R. Anderson, Noel Natera-Cordero, Victor H. Guarochico-Moreira, Irina V. Grigorieva, Ivan J. Vera-Marun
Summary: We investigate the controllability of charge and spin transport in high-quality bilayer graphene encapsulated with hBN and contacted via 1D spin injectors at room temperature. We demonstrate that spin transport in this device architecture is measurable and its parameters can be modulated by opening a band gap through a perpendicular displacement field. The modulation of spin current is primarily achieved by controlling the spin relaxation time with the displacement field, showcasing the fundamental operation of a spin-based field-effect transistor.
SCIENTIFIC REPORTS
(2023)
Article
Nanoscience & Nanotechnology
Titao Li, Wei Zheng, Siqi Zhu, Fei Wang, Yanming Zhu, Lemin Jia, Zeguo Lin, Feng Huang
Summary: (AlxGa1-x)(2)O-3 is a promising wide-band-gap sesquioxide for VUV photodetectors and high-power field-effect transistors. This study proposed a high-pressure O-2 (20 atm) annealing strategy to improve the crystallinity of beta-(AlxGa1-x)(2)O-3 and achieve a tunable optical band gap, revealing the local structure of Al3+ and the kinetic mechanism of Al3+ diffusion. The combination of HPOA-treated beta-(Al0.69Ga0.31)(2)O-3 films with p-type graphene led to the fabrication of a VUV photovoltaic detector with improved photovoltage and fast temporal response, providing an important strategy for enhancing the band-gap tunability of sesquioxides and zero-power-consumption photodetectors.
ACS APPLIED MATERIALS & INTERFACES
(2021)
Article
Engineering, Electrical & Electronic
Joe C. Campbell
Summary: This paper reviews the materials and structural approaches that have been developed to reduce excess noise in avalanche photodiodes and increase the gain-bandwidth product.
IEEE JOURNAL OF SELECTED TOPICS IN QUANTUM ELECTRONICS
(2022)
Article
Physics, Multidisciplinary
Nikita V. Tepliakov, Johannes Lischner, Efthimios Kaxiras, Arash A. Mostofi, Michele Pizzochero
Summary: In this study, a new perspective on the electronic structure of armchair graphene nanoribbons is presented using simple model Hamiltonians and ab initio calculations. The research demonstrates that the energy-gap opening in these nanoribbons is caused by the breaking of a hidden symmetry through long-ranged hopping of pi electrons and structural distortions at the edges. This hidden symmetry can be restored or manipulated through in-plane lattice strain, enabling continuous energy-gap tuning, the emergence of Dirac points at the Fermi level, and topological quantum phase transitions. This work establishes an original interpretation of the semiconducting properties of armchair graphene nanoribbons and provides guidelines for their rational electronic structure design.
PHYSICAL REVIEW LETTERS
(2023)
Article
Engineering, Multidisciplinary
Haifa S. Al Ghamdi, Ahmed A. Al-Ghamdi
Summary: Graphene, isolated in 2004 by Professors Andre Geim and Kostya Novoselov, has attracted significant research attention due to its unique properties and potential applications. In this study, low-cost and high photoluminescent graphene quantum dots (GQDs) were synthesized using deionized water and D-fructose as precursors in the presence of hydrochloric acid. The changing size of the GQDs was confirmed by transmission electron microscopy imaging, and hydrogen-functionalized GQDs were observed through nuclear magnetic resonance spectroscopy. The highest occupied molecular orbital (HOMO) and lowest unoccupied molecular orbital (LUMO) of the synthesized GQDs were determined, and an energy bandgap was obtained from optical investigations.
ALEXANDRIA ENGINEERING JOURNAL
(2023)
Article
Chemistry, Multidisciplinary
Giulia Tenasini, David Soler-Delgado, Zhe Wang, Fengrui Yao, Dumitru Dumcenco, Enrico Giannini, Kenji Watanabe, Takashi Taniguchi, Christian Moulsdale, Aitor Garcia-Ruiz, Vladimir I. Fal'ko, Ignacio Gutierrez-Lezama, Alberto F. Morpurgo
Summary: We experimentally investigate the charge transfer and electric field effect at the interface of bilayer graphene and chromium trihalide. Our findings demonstrate the generation of a band gap in bilayer graphene due to charge transfer, and the gap size is determined by the conductivity and gate voltage dependence. The experimental results agree well with theoretical predictions and suggest the correlation of electrons in the chromium trihalide conduction band.
Article
Engineering, Electrical & Electronic
Stephen D. March, Andrew H. Jones, Aaron J. Muhowski, Scott J. Maddox, Min Ren, Seth R. Bank
Summary: In this paper, we report on digital alloy AlxIn1-xAsySb1-y/GaSb staircase avalanche photodiodes that operate using carrier trapping induced tunneling gain. Experimental data is presented to confirm the model and electrostatic parameters for designing low-noise and deterministic gain scaling are derived.
IEEE JOURNAL OF SELECTED TOPICS IN QUANTUM ELECTRONICS
(2022)
Article
Chemistry, Multidisciplinary
Guigang Zhou, Huancheng Zhao, Xiangyang Li, Zhenhua Sun, Honglei Wu, Ling Li, Hua An, Shuangchen Ruan, Zhengchun Peng
Summary: This paper proposes a facile liquid-exfoliating method to prepare high-quality SnS2 nanosheets and fabricates a flexible photodetector using the SnS2 nanosheets with a graphene-PTAA hybrid structure. The photodetector shows high responsivity and detectivity from ultraviolet to near infrared. Furthermore, the flexible photodetector exhibits nearly invariable performance over bending cycles, making it suitable for wearable applications.
Article
Optics
Zahra Sadeghi Neisiani, Mahdi Khaje, Abdollah Eslami Majd, Amir Hossein Mehrfar
Summary: A photoconductive detector using a titanium dioxide (TiO2) thin film is fabricated in this paper, and the mechanism is changed to photogating by transferring monolayer graphene onto the film. The responsivity of the photogating detector can be increased to 40 A/W at a gate voltage of 15 V, while the gate voltage has no significant effect on the responsivity of the photoconductive detector. The increase in responsivity in the photogating detector is attributed to the application of gate voltage to the graphene layer. The efficiency of both detectors is confirmed up to a frequency of 5 kHz.
Article
Physics, Applied
Jose Manuel Taboada Vasquez, Aasim Ashai, Yi Lu, Vishal Khandelwal, Manoj Rajbhar, Mritunjay Kumar, Xiaohang Li, Biplab Sarkar
Summary: In this study, a broadband UV photodetector using a p-type NiOx layer and an n-type beta-Ga2O3 heterostructure in PIN configuration is demonstrated for the first time. The optimized NiOx/beta-Ga2O3 PIN photodiode shows good responsivity to incident light wavelengths in the UV-A, UV-B, and UV-C regions. A highly resistive beta-Ga2O3 layer is required for UV-C light absorption, while the NiOx layer provides good photoresponsivity in UV-A and UV-B regions. The results suggest promising device design strategies for wide bandgap semiconductor-based broadband UV PIN photodetectors.
JOURNAL OF PHYSICS D-APPLIED PHYSICS
(2023)
Article
Chemistry, Physical
Jagnaseni Pradhan, Sachin Kumar Srivastava, Magudapathy Palanivelu, Saravanan Kothalamuthu, Sundaravel Balakrishnan, Soumya Sarkar, Sinu Mathew, Thirumalai Venkatesan
Summary: The impact of single and dimer Ar ions on monolayer graphene on copper substrate leads to crater formation, disorder, and partial metallic behavior in graphene. Dimer irradiation results in higher local density of states and opening of a bandgap in graphene compared to monomer irradiation.
Article
Materials Science, Multidisciplinary
Chao Zhang, Chen-Yue Zhu, Zhen Yang, Di-Hua Lin, Chun-Yan Wu, Shi-Rong Chen, Yi-Zhong Yang, Li Wang, Yu-Xue Zhou, Lin-Bao Luo
Summary: An addressable 8 x 8 photodetector array is fabricated by combining In2Se3 nanofilm with periodic inverse micropyramid-Si (PIMP-Si). The device exhibits excellent self-powered photoresponse, competitive performance, and satisfactory pixel-to-pixel uniformity, showing potential applications in full-color image sensing and video capturing.
ADVANCED MATERIALS TECHNOLOGIES
(2023)
Article
Chemistry, Multidisciplinary
Can Fu, Zhi-Yuan Li, Jiang Wang, Xiang Zhang, Feng-Xia Liang, Di-Hua Lin, Xiao-Feng Shi, Qun-Ling Fang, Lin-Bao Luo
Summary: In this study, simple-structured wavelength sensors were developed using Au/MAPbI3/Au photodetectors deposited on an MAPbI3 single crystal. The sensors could accurately distinguish incident-light wavelengths ranging from 265 to 860 nm with a resolution of less than 1.5 nm. The high-performance MAPbI3 wavelength sensor has the potential to drive research progress in perovskites for wavelength recognition and full-color imaging.
Article
Nanoscience & Nanotechnology
Li Zhang, Zhenhua Wei, Xiuxiu Wang, Luoyu Zhang, Yi Wang, Chao Xie, Tao Han, Feng Li, Wei Luo, Dongxu Zhao, Mingsheng Long, Lei Shan
Summary: Metal mirror-enhanced Ta0.01W0.99Se2/SnS2 (TWS) heterodiode-based SBUV photodetector has a high photoresponsivity and fast response speed, making it suitable for a wide range of applications such as missile plume tracking, flame detection, environmental monitoring, and optical communication. This study provides an alternative method for designing fast-speed SBUV photodetectors with great potential in applications.
ACS APPLIED MATERIALS & INTERFACES
(2023)
Article
Chemistry, Multidisciplinary
Chen-hao Xu, Sheng-Hui Luo, Yang Wang, Xiao-Feng Shi, Can Fu, Jiang Wang, Chun-Yan Wu, Lin-Bao Luo
Summary: This study presents a solution method for a dual-band photodetector (PD) based on silicon nanowires /PbS nanocrystalline film n-n heterojunction. The device exhibits bias-selectable spectral response in the near-infrared (NIR) and short-wave infrared (SWIR) bands by adjusting the polarity of the bias voltage. It achieves high responsivities and detectivity in the NIR region, comparable to or even better than some commercial PDs, due to improved optical absorption and charge separation and collection efficiency through the heterojunction geometry. The study demonstrates the potential of detecting two distinct IR regions with the same pixel for future optoelectronic systems.
ADVANCED FUNCTIONAL MATERIALS
(2023)
Article
Engineering, Electrical & Electronic
Kunnan Zhou, Longqiang Shan, Yuliang Zhang, De Lu, Yuanming Ma, Xing Chen, Linbao Luo, Chunyan Wu
Summary: In this study, an AlGaN/GaN HEMT-based ultraviolet photodetector (UVPD) was fabricated by fluorine plasma treatment using C4F8 gas. The device exhibited a significantly reduced dark current and effectively suppressed the persistent photoconductivity (PPC) effect, resulting in a high responsivity of 1.3 x 10(4) A W-1 and a high specific detectivity of 1.8 x 10(15) Jones. This work provides a facile and cost-effective strategy for the fabrication of high-performance AlGaN/GaN HEMT-based UVPDs.
IEEE ELECTRON DEVICE LETTERS
(2023)
Article
Engineering, Electrical & Electronic
Li Wang, Xiu-Dong He, Quan-You Wang, Ning Qi, Song-Yun Tian, Mo-Lin Wang, Chun-Yan Wu, Ji-Gang Hu, Lin-Bao Luo
Summary: The state of each flow is crucial for many network functions. This paper focuses on per-flow cardinality and presents a new problem: online query of per-flow cardinality. Three solutions, On-vHLL, Ton-vHLL, and Aton-vHLL, are proposed with O(1) time complexity for query operation. These techniques involve the redesign of vHLL with incremental update units (IUUs) to reduce time complexity, the application of TailCut compression technique to save memory cost, and the addition of a prefilter based on min-heap for better accuracy in Ton-vHLL.
IEEE TRANSACTIONS ON ELECTRON DEVICES
(2023)
Article
Materials Science, Multidisciplinary
Yue Xing, Jiang-Xu Yang, Guang-Yong Zou, Can Fu, Yan Pan, Yu-Tian Xiao, Jiang Wang, Yan Wang, Lin-Bao Luo
Summary: Researchers have developed a high-resolution wavelength sensor by assembling two back-to-back monolayer graphene/Si/monolayer graphene heterojunctions. This device shows excellent photoelectric properties and can accurately estimate the wavelength of incident light in the range from 260 to 1050 nm, demonstrating a high resolution of 1 nm across a broadband wavelength from 260 to 1000 nm. This study provides potential promise for future spectral sensing applications.
ADVANCED OPTICAL MATERIALS
(2023)
Article
Nanoscience & Nanotechnology
Jinle Fan, Xuefeng Hu, Weiwei Qin, Ming Zhou, Zhi-Yuan Liu, Shou-Jing Gao, Li-Ping Tan, Lin-Bao Luo, Wei Zhang
Summary: By precisely controlling the selenization engineering, orthorhombic PdSe2 and monoclinic PdSe2 crystals were successfully integrated. The hybrid O/M-PdSe2 nanostructures were fabricated for the first time, and they exhibited high responsivity as a broadband photodetector and fast response and recovery times as a gas sensor.
ACS APPLIED NANO MATERIALS
(2023)
Article
Engineering, Electrical & Electronic
Li Wang, Yan Pan, Jia-Le Xing, Jian-Bo Mao, Yong-Jin Ba, Lu Cao, Mo-Lin Wang, Chun-Yan Wu, Xiang Zhang, Lin-Bao Luo
Summary: In this study, a planar type self-powered short wavelength infrared narrowband Si photodetector was developed using a simple Schottky structure. The distance between the Schottky electrode and the light irradiation region was increased to enhance the device sensitivity and reduce the size. With the assistance of a pyramid microstructure, the required distance for sub 100 nm narrowband detection was effectively decreased. The obtained photodetector exhibited high wavelength selectivity and sensitivity due to the large number of surface states and pronounced light confinement effect of the pyramid microstructure. This work opens up a new avenue for achieving planar-type narrowband photodetectors with better integration capabilities for on-chip applications than vertical devices.
IEEE ELECTRON DEVICE LETTERS
(2023)
Article
Engineering, Electrical & Electronic
Chunyan Wu, Xishen Guo, Xia Wu, Jinxulong Gao, Jun Wang, Yizhong Yang, Li Wang, Yuxue Zhou, Linbao Luo
Summary: In this study, a self-powered periodic inverse micropyramid (PIMP)-Si/graphene photodiode with high responsivity, specific detectivity, and fast response speed was reported. The rise/fall time at zero bias upon 880 nm illumination were found to be 226/364 μs, respectively. The introduction of an ultrathin interfacial oxide layer was shown to passivate surface states and improve current stability, enabling high-quality Fourier single-pixel imaging.
IEEE ELECTRON DEVICE LETTERS
(2023)
Article
Engineering, Electrical & Electronic
Zhen-Yu Zhang, Zhi-Xiang Zhang, Meng Shen, Cui-Yun Zhang, Can Fu, Xiang An, Jiang Wang, Xiang Zhang, Lin-Bao Luo
Summary: The study reports a narrowband blue light photodetector based on CH3NH3PbBrCl2 single crystal and its filterless application in blue light hazard detection. The photodetector is only sensitive to light between 400 and 500 nm, allowing for accurate detection of blue light hazard levels. With the introduction of back-end circuits, the photodetector has been applied to a portable blue light hazard detection system, showing potential applications in the future healthcare field.
IEEE TRANSACTIONS ON ELECTRON DEVICES
(2023)
Article
Materials Science, Multidisciplinary
Na Zhang, Fakun Wang, Pengyu Li, Yi Liang, Hao Luo, Decai Ouyang, Linbao Luo, Jinsong Wu, Yinghe Zhao, Yuan Li, Tianyou Zhai
Summary: In this study, a novel 2D hybrid heterostructure of bismuth selenide/oxyselenide with the coexistence of lateral and vertical interfaces is reported. The hybrid structure provides a large interface area and a wide depletion region, significantly improving the device's optoelectronic performances. The photodetectors exhibit reduced dark current and ultrafast photoresponse rate, and demonstrate outstanding image sensing capability over a wide spectral range.
Article
Materials Science, Multidisciplinary
Chao Xie, Yi Wang, Zhaosheng Xia, Yu Cheng, Xisheng Cui, Shijie Xu, Xingang Ren, Wenhua Yang, Zhixiang Huang
Summary: In this study, a highly efficient flexible photodetector with remarkable light trapping effect and excellent photoresponse performance was successfully fabricated. It also demonstrated outstanding mechanical flexibility and robust bending endurance, making it suitable for applications such as monitoring heart rate.
ADVANCED MATERIALS TECHNOLOGIES
(2023)
Article
Materials Science, Multidisciplinary
Feng-Xia Liang, Shi-Fu Li, Jie Yu, Liang-Liang Zhou, Jiang Wang, Can Fu, Xiang An, Jian-An Huang, Li Wang, Lin-Bao Luo
Summary: A series of MAPbBr(3-n)X(n) (X=Cl, I) single-crystal films with controllable thickness have been grown through space-limited inverse temperature crystallization, achieving filter-free narrowband photodetectors with peak responses at 505, 590 and 620 nm, corresponding to the green, yellow and red of traffic lights. These narrowband photodetectors demonstrate superior performance, with a maximum responsivity of 182 mA W^-1 and specific detectivity of 9.68 x 10(10) Jones, and a traffic light recognition assembly based on them shows good color recognition capability.
JOURNAL OF MATERIALS CHEMISTRY C
(2023)
Article
Materials Science, Multidisciplinary
Di-Hua Lin, Fang Wan, Shu-Chang Gong, Can Fu, Feng-Xia Liang, Lin-Bao Luo
Summary: Dual-band photodetectors (DBPDs) are widely used in multispectral information monitoring in both civil and military applications. This paper presents a novel DBPD fabricated using a silicon nanowire array, which exhibits dual-band absorption resulting from leaky mode resonances (LMRs) in the nanowires. Experimental results show two peak responsivities at 430 nm and 660 nm, matching well with simulations and confirming the practicality of this silicon-based wavelength-selective spectral detection device.
JOURNAL OF MATERIALS CHEMISTRY C
(2023)
