Synthesis and physical properties of Ag doped niobium pentoxide thin films for Ag-Nb2O5/Si heterojunction device

Ag nanoparticles were homogenously sparsed on Nb2O5 thin films, by drop casting method at different doping duration between 30 to 120 s. The effect of incorporated silver on the structural and optical properties was analyzed using x-ray diffraction technique, scanning electron microscopy (SEM) and UV-vis spectroscopy. A reduction in the films crystallinity was observed due to Ag incorporation within the host material. The obtained results of the Ag-Nb2O5 thin films revealed uniform, dense and smooth surface with shifted absorbance towards visible region at different doping periods. Ag-Nb2O5/Si heterojunction devices were successfully prepared with enhanced optoelectronic properties in comparison with its pure Nb2O5/Si heterojunction device. The shifted spectral responsivity was noticed at selected doping time. This has resulted in enhancement of the device electrical properties.