An Electric‐Field‐Controlled High‐Speed Coexisting Multibit Memory and Boolean Logic Operations in Manganite Nanowire via Local Gating

A strain-induced new phase diagram and unusually high Curie temperature in manganites

(2017) Yunfang Kou et al.   Journal of Materials Chemistry C

Electrically Induced Multiple Metal-Insulator Transitions in Oxide Nanodevices

(2017) Javier del Valle et al.   Physical Review Applied

Reconfigurable Magnetic Logic Combined with Nonvolatile Memory Writing

(2016) Zhaochu Luo et al.   ADVANCED MATERIALS

The chips are down for Moore’s law

(2016) M. Mitchell Waldrop   NATURE

Logic circuit prototypes for three-terminal magnetic tunnel junctions with mobile domain walls

(2016) J. A. Currivan-Incorvia et al.   Nature Communications

Nonvolatile Memory Based on Nonlinear Magnetoelectric Effects

(2016) Jianxin Shen et al.   Physical Review Applied

Large Tunability of Physical Properties of Manganite Thin Films by Epitaxial Strain

(2015) Wen-Gang Wei et al.   CHINESE PHYSICS LETTERS

Control of co-existing phases and charge transport in a nanostructured manganite film by field effects with an electric double layer as the gate dielectric

(2015) Rajib Nath et al.   RSC Advances

LSMO thin films with high metal–insulator transition temperature on buffered SOI substrates for uncooled microbolometers

(2014) Š. Chromik et al.   APPLIED SURFACE SCIENCE

Three-Dimensional Observation of the Conductive Filament in Nanoscaled Resistive Memory Devices

(2014) Umberto Celano et al.   NANO LETTERS

Nonvolatile “AND,” “OR,” and “NOT” Boolean logic gates based on phase-change memory

(2013) Y. Li et al.   JOURNAL OF APPLIED PHYSICS

Electrophoretic-like Gating Used To Control Metal–Insulator Transitions in Electronically Phase Separated Manganite Wires

(2013) Hangwen Guo et al.   NANO LETTERS

Magnetic-field-controlled reconfigurable semiconductor logic

(2013) Sungjung Joo et al.   NATURE

Spin Hall effect clocking of nanomagnetic logic without a magnetic field

(2013) Debanjan Bhowmik et al.   Nature Nanotechnology

Beyond von-Neumann Computing with Nanoscale Phase-Change Memory Devices

(2012) C. David Wright et al.   ADVANCED FUNCTIONAL MATERIALS

A Single-Device Universal Logic Gate Based on a Magnetically Enhanced Memristor

(2012) Mirko Prezioso et al.   ADVANCED MATERIALS

High-speed metal-insulator transition in vanadium dioxide films induced by an electrical pulsed voltage over nano-gap electrodes

(2012) J. Leroy et al.   APPLIED PHYSICS LETTERS

Memristive devices for computing

(2012) J. Joshua Yang et al.   Nature Nanotechnology

Metal–Oxide RRAM

(2012) H.-S. Philip Wong et al.   PROCEEDINGS OF THE IEEE

Oxide Electronics Utilizing Ultrafast Metal-Insulator Transitions

(2011) Zheng Yang et al.   Annual Review of Materials Research

Voltage-Pulse-Induced Switching Dynamics in $ \hbox{VO}_{2}$ Thin-Film Devices on Silicon

(2011) Giwan Seo et al.   IEEE ELECTRON DEVICE LETTERS

Direct communication between magnetic tunnel junctions for nonvolatile logic fan-out architecture

(2010) Andrew Lyle et al.   APPLIED PHYSICS LETTERS

‘Memristive’ switches enable ‘stateful’ logic operations via material implication

(2010) Julien Borghetti et al.   NATURE

Memristor−CMOS Hybrid Integrated Circuits for Reconfigurable Logic

(2009) Qiangfei Xia et al.   NANO LETTERS

Large Electric Field Effect in Electrolyte-Gated Manganites

(2009) Anoop Singh Dhoot et al.   PHYSICAL REVIEW LETTERS

Write Current Reduction in Transition Metal Oxide Based Resistance Change Memory

(2008) S.-E. Ahn et al.   ADVANCED MATERIALS

Resistive switching in transition metal oxides

(2008) Akihito Sawa   Materials Today