Journal
ADVANCED ELECTRONIC MATERIALS
Volume 5, Issue 9, Pages -Publisher
WILEY
DOI: 10.1002/aelm.201800629
Keywords
nanoelectronics; oxygen exchange; resistive switching; strongly correlated systems
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Resistive switching effects are in a superb position to tackle the challenges for the near future of nanoelectronics and neuromorphics. Material-wise, the outstanding properties of strongly correlated metallic perovskite oxides, in particular, those displaying metal-insulator transition can be exploited for a new generation of devices based on a volume resistive switching (VRS) phenomenon beyond filamentary and interface ideas. This study reports a full description of this new and robust physical mechanism governing VRS memory effects in mixed-valence mixed-conductor metallic La1-xSrxMnO3-y perovskites by identifying the role and rate limiting steps of oxygen exchange through oxygen partial pressure experiments. It is demonstrated that oxygen migration can be smartly engineered by introducing a CeO2-x capping layer, which is further used to validate the VRS phenomenon by operating a nonvolatile and volumetric proof-of-concept gate-controlled three-terminal conductive bridge device.
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