4.5 Article

Analysis of a drift-diffusion model for organic semiconductor devices

Journal

Publisher

SPRINGER INTERNATIONAL PUBLISHING AG
DOI: 10.1007/s00033-019-1089-z

Keywords

Drift-diffusion system; Organic semiconductor; Charge transport; Existence of weak solutions; Gauss-Fermi integrals

Funding

  1. Einstein Center for Mathematics (ECMath) via MATHEON project D-SE18
  2. Einstein Center for Mathematics (ECMath) via MATH+ transition project SE18

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We discuss drift-diffusion models for charge carrier transport in organic semiconductor devices. The crucial feature in organic materials is the energetic disorder due to random alignment of molecules and the hopping transport of carriers between adjacent energetic sites. The former leads to statistical relations with Gauss-Fermi integrals, which describe the occupation of energy levels by electrons and holes. The latter gives rise to complicated mobility models with a strongly nonlinear dependence on temperature, density of carriers, and electric field strength. We present the state-of-the-art modeling of the transport processes and provide a first existence result for the stationary drift-diffusion model taking all of the peculiarities of organic materials into account. The existence proof is based on Schauder's fixed-point theorem.

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