Journal
SOLID-STATE ELECTRONICS
Volume 159, Issue -, Pages 142-149Publisher
PERGAMON-ELSEVIER SCIENCE LTD
DOI: 10.1016/j.sse.2019.03.049
Keywords
Polarization charges; Strain relaxation; III-Nitride; Nanowire; Solar cell
Funding
- Visvesvaraya PhD Fellowship of MeitY, Govt. of India
- TEQIP-II
Ask authors/readers for more resources
The innovative contribution of this paper is to derive polarization charges in hexagonal and triangular GaN/InGaN/GaN core/shell/shell nanowire solar cells considering effect of degree of strain relaxation (R) and appropriate stiffness coefficients. The crystal orientation angle, phi and non-linear effect of spontaneous polarization are tailored with strain calculations for a better precision of polarization charges in nanowire type devices. The article also formulated the effect of polarization charges while InGaN layers are grown above or below GaN layer in both types of nanowires depending on the lattice expansion or compression. The model accounts an innovative concept of polarization charges distribution with respect to growth of crystal orientation and strain relaxation. It is observed that nanowire solar cell with triangular geometry could be good enough for efficient generation of power as compared to hexagonal nanowire solar cell. This concept of one triangular nanowire solar cell exhibits an efficiency of 3.18% with 90.34% fill factor under 1 Sun AM1.5 illumination with 20% 'In' composition.
Authors
I am an author on this paper
Click your name to claim this paper and add it to your profile.
Reviews
Recommended
No Data Available