Strain behavior and Carrier mobility for novel two-dimensional semiconductor of GeP: First principles calculations

Published 2018 View Full Article

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Title
Strain behavior and Carrier mobility for novel two-dimensional semiconductor of GeP: First principles calculations
Authors
Keywords
First principles calculations, Two-dimensional semiconductor, GeP, Strain, Mobility
Journal
PHYSICA E-LOW-DIMENSIONAL SYSTEMS & NANOSTRUCTURES
Volume 107, Issue -, Pages 124-130
Publisher
Elsevier BV
Online
2018-11-15
DOI
10.1016/j.physe.2018.11.024

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