Journal
OPTICS LETTERS
Volume 44, Issue 5, Pages 1072-1075Publisher
OPTICAL SOC AMER
DOI: 10.1364/OL.44.001072
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Funding
- Ministry of Science and Technology, Taiwan (MOST) [106-2112-M-110-006-MY3]
- National Natural Science Foundation of China (NSFC) [61378022, 61475088, 61605100, 61775119]
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This Letter compared the absorption characteristics of a homemade graphene-Bi2Te3 (G-B) van der Waals heterostructure to a Bi2Te3 topological insulator (TI) with a similar preparation method and number of layers. The results indicate that the G-B heterostructure can tremendously enhance the modulation depth and saturable intensity. In addition, a passively Q-switched laser at 1.06 mu m with a G-B heterostructure as a saturable absorber (SA) was demonstrated for the first time, to the best of our knowledge. Compared to Bi2Te3 TI, the G-B heterostructure Q-switched laser had better laser performance, indicating that a G-B heterostructure is a promising SA candidate for a 1 mu m laser. (c) 2019 Optical Society of America
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