Article
Multidisciplinary Sciences
Yi Liu, Johan Knutsson, Nathaniel Wilson, Elliot Young, Sebastian Lehmann, Kimberly A. Dick, Chris J. Palmstrom, Anders Mikkelsen, Rainer Timm
Summary: This research demonstrates the self-selective growth of ordered few atoms structures using larger III-V semiconductor nanowires as templates, showing the potential for designing structures with predicted novel topological nature.
NATURE COMMUNICATIONS
(2021)
Article
Engineering, Electrical & Electronic
Vladislav Khayrudinov, Tomi Koskinen, Kacper Grodecki, Krzysztof Murawski, Malgorzata Kopytko, Lide Yao, Hua Jiang, Ilkka Juhani Tittonen, Harri Lipsanen, Tuomas Haggren
Summary: This paper reports the direct growth of InSb nanowires (NWs) and the fabrication of monolithic devices on flexible plastic substrates. The self-catalyzed growth of InSb NWs was achieved using metal-organic vapor-phase epitaxy (MOVPE). The InSb NWs were found to have a zinc-blende crystal structure and exhibited strong photoluminescence at room temperature. The NW array showed light-trapping properties with significantly reduced reflectance compared to bulk material. Moreover, a metal-semiconductor-metal photoresistor was successfully demonstrated using the InSb NWs directly on a flexible plastic substrate. These results are believed to advance the integration of III-V nanowires into flexible devices, especially infrared photodetectors.
ACS APPLIED ELECTRONIC MATERIALS
(2022)
Article
Chemistry, Multidisciplinary
Bruno Cesar da Silva, Odilon Divino Damasceno Couto, Helio Obata, Carlos Alberto Senna, Braulio Soares Archanjo, Fernando Iikawa, Monica Alonso Cotta
Summary: This study investigated the emission properties of metastable wurtzite crystal phase in gallium phosphide (WZ GaP) using photoluminescence, revealing the presence of two broad emission bands and two sharp peaks. The broad emissions were associated with carbon and crystal defects, while the sharp emissions were attributed to radiative recombination channels. Increasing the gallium content enhanced the dominant broad emission, while the precursor flow did not affect the low-temperature photoluminescence spectra.
Article
Nanoscience & Nanotechnology
Yang Chen, Hang Zang, Shanli Zhang, Zhiming Shi, Jianwei Ben, Ke Jiang, Yuping Jia, Mingrui Liu, Dabing Li, Xiaojuan Sun
Summary: In this study, the van der Waals epitaxy of c-oriented wurtzite AlGaN on Mo substrate was achieved by high-temperature metal-organic chemical vapor deposition. The insertion of a graphene layer improved the heat dissipation ability and stability of AlGaN, providing a favorable condition for the fabrication of efficient ultraviolet devices.
ACS APPLIED MATERIALS & INTERFACES
(2022)
Article
Nanoscience & Nanotechnology
Ze Li, Qingzhang You, Hui Wang, Lisheng Zhang, Duan Zhang, Shangtong Jia, Yan Fang, Peijie Wang
Summary: In this study, a plasmonic nanowire dimer (NWD) system was constructed to enhance the light emission of surface defects of silicon off the hot spot on the submicron scale. The NWD can trap light through the plasmonic gap and efficiently radiate light by coupling with the dipole gap plasmonic mode. The photoluminescence emission was significantly enhanced by up to 126 folds through the coupling of dipole plasmonic mode with the emitters.
Article
Materials Science, Multidisciplinary
Tarek Hidouri, Hassen Maaref, D. P. Samajdar, Mohamed Ben Rabeh, Samia Nasr, Fatiha Saidi, Nawal Ameur, Faouzi Saidi, Jamila Dhahri, Ridha Mghaieth
Summary: The recombination dynamics of BxGa1-xAs alloys grown on GaAs (001) by metal-organic chemical vapor deposition (MOCVD) were investigated through steady-state photoluminescence and Time-Resolved Photoluminescence (TRPL) measurements. The decay time was found to vary depending on emission energy, sample geometry, and post-growth treatment. Exciton dynamics in boron-based ternary alloys were influenced by temperature, with different mechanisms dominating at low, intermediate, and high temperatures. The research findings highlighted the importance of bandgap inhomogeneity and below-band gap states for carrier relaxation dynamics in BxGa1-xAs/GaAs alloys.
Article
Optics
Shengqiong Chen, Jiebin Niu, Longjie Li, Cheng Lu, Lina Shi, Changqing Xie
Summary: This study demonstrates lasing behavior in a silicon nanowire pair and achieves low-threshold integrated nanolasers by controlling the coupling of the silicon nanowire pair.
Article
Materials Science, Multidisciplinary
Smruti Medha Mishra, Suman Dey, Tukai Singha, Subhankar Mandal, Asish K. Dehury, Yatendra S. Chaudhary, Biswarup Satpati
Summary: In this study, a silicon nanowire-carbon quantum dot heterostructure photovoltaic device was developed by directly coating carbon quantum dots on chemically-etched silicon nanowire arrays. The efficiency of the solar cells was improved by using carbon quantum dots as a surface passivation and modification element for the silicon nanowires. A 1.6 times absorption enhancement was observed for the nitrogen doped carbon quantum dot decorated pyramidal silicon nanowire heterostructure compared to carbon quantum dots coated silicon nanowires on planar surfaces. The inclusion of nitrogen doped carbon quantum dots into the pyramidal silicon nanowire arrays provided enhanced absorption intensity, making them a good absorber layer in solar cells. The heterostructure also exhibited significant photoluminescence in the blue region, allowing insight into the recombination mechanism.
MATERIALS RESEARCH BULLETIN
(2023)
Article
Chemistry, Multidisciplinary
Gabin Gregoire, Mohammed Zeghouane, Curtis Goosney, Nebile Isik Goktas, Philipp Staudinger, Heinz Schmid, Kirsten E. Moselund, Thierry Taliercio, Eric Tournie, Agnes Trassoudaine, Evelyne Gil, Ray R. LaPierre, Yamina Andre
Summary: The selective area growth of InAs nanowires by the catalyst-free vapor-solid method was reported. InAs nanowires with high aspect ratio and hexagonal shape were successfully grown on GaAs and Si substrates. The study demonstrated the high potential of HVPE-grown InAs nanowires for future multispectral photo-detection devices.
CRYSTAL GROWTH & DESIGN
(2021)
Article
Chemistry, Multidisciplinary
Daniele Barettin, Igor V. V. Shtrom, Rodion R. R. Reznik, George E. E. Cirlin
Summary: We conducted a study using a numerical model based on (k) over right arrow center dot (p) over right arrow, which includes electromechanical fields, to analyze the electromechanical and optoelectronic characteristics of individual GaAs quantum dots embedded in direct band gap AlGaAs nanowires. The geometry and dimensions of the quantum dots, particularly the thickness, were determined using experimental data collected by our research group. Additionally, we compared the experimental spectra with the numerically calculated spectra to validate our model.
Article
Materials Science, Multidisciplinary
P. Sajan, C. K. Krishna Sagar, N. G. Divya, G. Subodh, M. Junaid Bushiri
Summary: The study synthesized Nd2O3 in ZnS microspheres for the first time, characterizing the material without hindering the IR emission lines of Nd ions. The fluorescence spectra of Nd2O3 in ZnS microspheres showed intense Nd-related emission peaks and weak blue emission, suitable for the fabrication of NIR LEDs and biological imaging.
MATERIALS CHEMISTRY AND PHYSICS
(2021)
Article
Chemistry, Physical
Tran Huu Toan, Thanh Binh Dinh, Tien Dai Nguyen, Thi Bich Vu, Dai Lam Tran, Tien Thanh Nguyen, Eui-Tae Kim
Summary: The synthesis of CuO nanowires on ITO coated with MoS2 flakes resulted in a high photocurrent density and efficiency for hydrogen evolution reaction. The combination of MoS2 and CuO showed improved stability and activity, reducing over potential and dark current in the photoelectrochemical cell.
SURFACES AND INTERFACES
(2021)
Article
Chemistry, Physical
Biswajit Pal, Kalyan Jyoti Sarkar, Sourav Das, P. Banerji
Summary: The study investigated the photodetection properties of a core-shell nanowire heterojunction device based on p-Si/n-InP, showing promising performance in the NIR spectral region.
JOURNAL OF ALLOYS AND COMPOUNDS
(2021)
Article
Multidisciplinary Sciences
Youngmin Kim, Simone Assali, Hyo-Jun Joo, Sebastian Koelling, Melvina Chen, Lu Luo, Xuncheng Shi, Daniel Burt, Zoran Ikonic, Donguk Nam, Oussama Moutanabbir
Summary: This study presents an experimental observation of enhanced photoluminescence from a single Ge/GeSn core/shell nanowire, demonstrating the potential to achieve strong cavity effects in group-IV nanowires. and provides new possibilities for on-chip light sources in the short-wave infrared range.
NATURE COMMUNICATIONS
(2023)
Article
Materials Science, Ceramics
Wei Chen, Teng Jiao, Zhaoti Diao, Zhengda Li, Peiran Chen, Xinming Dang, Xin Dong, Yuantao Zhang, Baolin Zhang
Summary: ss-Ga2O3 nanowire films were synthesized on Si(111) substrate by selective area growth (SAG) using metal-organic chemical vapor deposition (MOCVD). The effects of MOCVD process parameters on SAG were discussed by calculating Ga supersaturation. Transmission electron microscopy confirmed the preferential orientation of (002) crystal plane in ss-Ga2O3 nanowires. P-Si/ss-Ga2O3 nanowire heterojunctions were fabricated and exhibited high film resistance.
CERAMICS INTERNATIONAL
(2023)
Article
Engineering, Electrical & Electronic
A. Azizur Rahman, Emroj Hossain, Hetal Vaishnav, Arnab Bhattacharya, Arun Sarma
SEMICONDUCTOR SCIENCE AND TECHNOLOGY
(2019)
Article
Chemistry, Multidisciplinary
Carina B. Maliakkal, Erik K. Martensson, Marcus Ulf Tornberg, Daniel Jacobsson, Axel R. Persson, Jonas Johansson, Lars Reine Wallenberg, Kimberly A. Dick
Article
Materials Science, Coatings & Films
Amit P. Shah, A. Azizur Rahman, Arnab Bhattacharya
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A
(2020)
Article
Engineering, Electrical & Electronic
Emroj Hossain, A. Azizur Rahman, Amit P. Shah, Bhagyashree A. Chalke, Arnab Bhattacharya
SEMICONDUCTOR SCIENCE AND TECHNOLOGY
(2020)
Article
Chemistry, Physical
Marcus Tornberg, Carina B. Maliakkal, Daniel Jacobsson, Kimberly A. Dick, Jonas Johansson
JOURNAL OF PHYSICAL CHEMISTRY LETTERS
(2020)
Article
Mechanics
Emroj Hossain, Satyanu Bhadra, Harsh Jain, Soumen Das, Arnab Bhattacharya, Shankar Ghosh, Dov Levine
Article
Engineering, Electrical & Electronic
A. Azizur Rahman, Nirupam Hatui, Carina B. Maliakkal, Priti Gupta, Jayesh B. Parmar, Bhagyashree A. Chalke, Arnab Bhattacharya
Summary: The study found that the choice of nucleation layer significantly affects the properties of semipolar GaN epilayers. Direct growth of (112 over bar 2) GaN without buffer layers provided the best crystal quality and relatively enhanced near-band-edge photoluminescence emission.
JOURNAL OF ELECTRONIC MATERIALS
(2021)
Article
Nanoscience & Nanotechnology
Carina B. Maliakkal, Daniel Jacobsson, Marcus Tornberg, Kimberly A. Dick
Summary: In situ transmission electron microscopy was used to study the formation of GaAs nanowires from liquid Au-Ga catalysts on amorphous substrates, revealing lattice-resolved observations of the initial growth stages for the first time. The preferential growth direction of nanowires along the zincblende 111 or wurtzite0001 direction may be attributed to the lower interface energy between catalyst droplets and nanowires on the {111} facet.
Article
Materials Science, Multidisciplinary
Marcus Tornberg, Carina B. Maliakkal, Daniel Jacobsson, Reine Wallenberg, Kimberly A. Dick
Summary: The world of environmental microscopy offers the possibility to study transformations and reactions during realistic conditions. This study presents the design and development of a metal-organic chemical vapor deposition (MOCVD) system integrated with an environmental transmission electron microscope for real-time investigations of crystal growth. The influences of temperature and reactive gas on imaging and spectroscopy are evaluated.
MICROSCOPY AND MICROANALYSIS
(2022)
Article
Materials Science, Multidisciplinary
A. Azizur Rahman, Arnab Bhattacharya, Arun Sarma
Summary: Cu-Sb-X (X = S, Se, Te) based ternary chalcogenide semiconductors, including Cu3SbS4, Cu3SbSe4, and CuSbTe2, were successfully synthesized by a two-stage process. The synthesized thin films exhibited good crystallinity and optical properties, as confirmed by x-ray diffraction, elemental analyses, scanning electron microscopy, optical spectroscopy, and Raman spectroscopy.
Article
Materials Science, Multidisciplinary
Ajinkya Punjal, Shraddha Choudhary, Maneesha Narayanan, Dhanashree Chemate, Ruta Kulkarni, Arumugam Thamizhavel, Arnab Bhattacharya, S. S. Prabhu
Summary: The terahertz optical properties of vanadium-doped beta-Ga2O3 were studied using terahertz time-domain spectroscopy, showing strong birefringence in the 0.2-2.4 THz range and acting as both a quarter-waveplate and a half-waveplate at specific frequencies.
OPTICAL MATERIALS EXPRESS
(2022)
Article
Chemistry, Multidisciplinary
Carina B. Maliakkal, Marcus Tornberg, Daniel Jacobsson, Sebastian Lehmann, Kimberly A. Dick
Summary: The controlled VSS growth of compound nanowires is studied, comparing the growth kinetics and dynamics under liquid and solid catalysts. The temperature and thermal history of the system are manipulated to control the catalyst phase, revealing that the VSS growth rate is slightly slower than the VLS growth rate.
NANOSCALE ADVANCES
(2021)
Article
Chemistry, Multidisciplinary
Subhadip Das, Suchitra Prasad, Biswanath Chakraborty, Bhakti Jariwala, Sai Shradha, D. V. S. Muthu, Arnab Bhattacharya, U. V. Waghmare, A. K. Sood
Summary: In this study, the impact of electron doping on the vibrational modes of a bilayer ReS2 channel in a field-effect transistor was analyzed using Raman spectroscopy. The results showed that the frequency and linewidth of in-plane vibrational modes were affected by doping, while the out-of-plane modes remained unaffected. Density functional theory calculations provided a quantitative understanding of the strong electron-phonon coupling in the in-plane modes, which was attributed to a structural phase transition in ReS2.
Article
Materials Science, Multidisciplinary
A. Azizur Rahman, Emroj Hossian, Hetal Vaishnav, Jayesh B. Parmar, Arnab Bhattacharya, Arun Sarma
MATERIALS ADVANCES
(2020)
