4.2 Article

Evaluation of size influence on performance figures of a single photon avalanche diode fabricated in a 180 nm standard CMOS technology

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SPRINGER
DOI: 10.1007/s10470-016-0763-8

Keywords

Single photon avalanche diode (SPAD); Photodetector; Avalanche photodiodes; CMOS image sensor

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We present the performance characteristics of a single photon avalanche diode (SPAD) fabricated in a 180 nm standard CMOS image sensor technology. The SPAD structure was implemented in 8 different diameters between 5 and 40 mu m to determine the influence of size variation on the SPAD performances in terms of dark count rate, afterpulsing, efficiency and time resolution. The measurements show a dark count rate below 10 kHz at 15 A degrees C with a low afterpulsing probability (0.2 % at an excess bias of 300 mV), a good Photodetection efficiency (similar to 20 %) and a very good time resolution (< 70 ps FWHM at 450 nm) .

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