Stabilizing Resistive Switching Characteristics by Inserting Indium-Tin-Oxide Layer as Oxygen Ion Reservoir in HfO2-Based Resistive Random Access Memory

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Title
Stabilizing Resistive Switching Characteristics by Inserting Indium-Tin-Oxide Layer as Oxygen Ion Reservoir in HfO2-Based Resistive Random Access Memory
Authors
Keywords
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Journal
IEEE TRANSACTIONS ON ELECTRON DEVICES
Volume 66, Issue 3, Pages 1276-1280
Publisher
Institute of Electrical and Electronics Engineers (IEEE)
Online
2019-02-07
DOI
10.1109/ted.2019.2895079

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