Effects of Trapped Charges in Gate Dielectric and High- ${k}$ Encapsulation on Performance of MoS2 Transistor

Published 2019 View Full Article

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Title
Effects of Trapped Charges in Gate Dielectric and High- ${k}$ Encapsulation on Performance of MoS2 Transistor
Authors
Keywords
-
Journal
IEEE TRANSACTIONS ON ELECTRON DEVICES
Volume 66, Issue 2, Pages 1107-1112
Publisher
Institute of Electrical and Electronics Engineers (IEEE)
Online
2019-01-09
DOI
10.1109/ted.2018.2888598

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