A 1-Mb 28-nm 1T1MTJ STT-MRAM With Single-Cap Offset-Cancelled Sense Amplifier and In Situ Self-Write-Termination

Authors

Keywords

Journal

Volume 54, Issue 1, Pages 231-239

Publisher

Institute of Electrical and Electronics Engineers (IEEE)

Online

2018-10-17

DOI

10.1109/jssc.2018.2872584

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