Temperature dependence of electrical properties in \hbox {In/Cu}_2\hbox {ZnSnTe}_4\hbox {/Si/Ag diodes} In/Cu 2 ZnSnTe 4 /Si/Ag diodes

Investigation of carrier transport mechanisms in the Cu–Zn–Se based hetero-structure grown by sputtering technique

(2018) H.H. Güllü et al.   CANADIAN JOURNAL OF PHYSICS

Analysis of current conduction mechanism in CZTSSe/n-Si structure

(2018) M. Terlemezoglu et al.   JOURNAL OF MATERIALS SCIENCE-MATERIALS IN ELECTRONICS

Study on the electrical properties of ZnSe/Si heterojunction diode

(2017) H. H. Güllü et al.   JOURNAL OF MATERIALS SCIENCE-MATERIALS IN ELECTRONICS

Investigation of precursor sequence and post-annealing effects on the properties of Cu2SnZnSe4 thin films deposited by the elemental thermal evaporation

(2017) Ö Bayraklı et al.   Materials Research Express

Synthesis and characterization of kesterite Cu2ZnSnTe4via ball-milling of elemental powder precursors

(2016) Devendra Pareek et al.   RSC Advances

Synthesis, characterization and alloying of Cu2ZnSnQ4 (Q=S, Se and Te) nanocrystals

(2015) Kaya Wei et al.   JOURNAL OF SOLID STATE CHEMISTRY

Route towards low cost-high efficiency second generation solar cells: current status and perspectives

(2014) O. Vigil-Galán et al.   JOURNAL OF MATERIALS SCIENCE-MATERIALS IN ELECTRONICS

The Richardson constant and barrier inhomogeneity at Au/Si3N4/n-Si (MIS) Schottky diodes

(2013) A Tataroğlu et al.   PHYSICA SCRIPTA

On the mechanism of current-transport in Cu/CdS/SnO2/In–Ga structures

(2011) Habibe Uslu et al.   JOURNAL OF ALLOYS AND COMPOUNDS

Distribution of barrier heights in Au/porous GaAs Schottky diodes from current–voltage–temperature measurements

(2010) Z. Harrabi et al.   PHYSICA B-CONDENSED MATTER

Assessment of thermoelectric performance of Cu2ZnSnX4, X=S, Se, and Te

(2009) C. Sevik et al.   APPLIED PHYSICS LETTERS

The analysis of the series resistance and interface states of MIS Schottky diodes at high temperatures using I–V characteristics

(2009) A. Tataroğlu et al.   JOURNAL OF ALLOYS AND COMPOUNDS

Gaussian distribution of inhomogeneous barrier height in Al/SiO2/p-Si Schottky diodes

(2008) D. E. Yıldız et al.   JOURNAL OF APPLIED PHYSICS