Highly preferred orientation of Ga2O3 films sputtered on SiC substrates for deep UV photodetector application

Title
Highly preferred orientation of Ga2O3 films sputtered on SiC substrates for deep UV photodetector application
Authors
Keywords
Ga, 2, O, 3, film, Preferred orientation, Magnetron sputtering, Annealing, Deep ultraviolet detector
Journal
APPLIED SURFACE SCIENCE
Volume 471, Issue -, Pages 694-702
Publisher
Elsevier BV
Online
2018-12-06
DOI
10.1016/j.apsusc.2018.12.045

Ask authors/readers for more resources

Reprint

Contact the author

Find Funding. Review Successful Grants.

Explore over 25,000 new funding opportunities and over 6,000,000 successful grants.

Explore

Find the ideal target journal for your manuscript

Explore over 38,000 international journals covering a vast array of academic fields.

Search