Journal
APPLIED PHYSICS LETTERS
Volume 114, Issue 10, Pages -Publisher
AMER INST PHYSICS
DOI: 10.1063/1.5090270
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Funding
- National Science Foundation (NSF) [NSF-ECCS 1740136]
- nCORE, a wholly owned subsidiary of the Semiconductor Research Corporation (SRC), through the Center on Antiferromagnetic Magneto-electric Memory and Logic task [2760.002]
- NSF [ECCS-1542182]
- Nebraska Research Initiative
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The interfaces of layered trichalcogenide TiS3(001), with metals Au and Pt, were examined using X-ray photoemission spectroscopy. In spite of the fact that both Au and Pt are large work function metals, no evidence of Schottky barrier formation was found with this n-type semiconductor. Two-and four-terminal field-effect transistor measurements performed on exfoliated few-nm-thick TiS3 crystals using pure Au contacts indicate that Au forms an Ohmic contact on TiS3(001), with negligible contact resistance. The absence of appreciable Schottky barrier formation is attributed to strong interactions with sulfur at the metal-semiconductor interface. Published under license by AIP Publishing.
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