Sub-nanosecond pulse programming and device design strategy for analog resistive switching in HfOx-based resistive random access memory
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Title
Sub-nanosecond pulse programming and device design strategy for analog resistive switching in HfOx-based resistive random access memory
Authors
Keywords
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Journal
APPLIED PHYSICS LETTERS
Volume 114, Issue 11, Pages 112102
Publisher
AIP Publishing
Online
2019-03-18
DOI
10.1063/1.5078782
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Related references
Note: Only part of the references are listed.- Improving Analog Switching in HfOx-Based Resistive Memory With a Thermal Enhanced Layer
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- Modeling and Optimization of Bilayered TaOxRRAM Based on Defect Evolution and Phase Transition Effects
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- Energy-Efficient Hybrid Perovskite Memristors and Synaptic Devices
- (2016) Zhengguo Xiao et al. Advanced Electronic Materials
- Training and operation of an integrated neuromorphic network based on metal-oxide memristors
- (2015) M. Prezioso et al. NATURE
- Activity-Dependent Synaptic Plasticity of a Chalcogenide Electronic Synapse for Neuromorphic Systems
- (2014) Yi Li et al. Scientific Reports
- Synaptic Learning and Memory Functions Achieved Using Oxygen Ion Migration/Diffusion in an Amorphous InGaZnO Memristor
- (2012) Zhong Qiang Wang et al. ADVANCED FUNCTIONAL MATERIALS
- Metal–Oxide RRAM
- (2012) H.-S. Philip Wong et al. PROCEEDINGS OF THE IEEE
- A Functional Hybrid Memristor Crossbar-Array/CMOS System for Data Storage and Neuromorphic Applications
- (2011) Kuk-Hwan Kim et al. NANO LETTERS
- Ultrafast resistive switching in SrTiO3:Nb single crystal
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