Journal
APPLIED PHYSICS LETTERS
Volume 114, Issue 9, Pages -Publisher
AMER INST PHYSICS
DOI: 10.1063/1.5082901
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Funding
- Basic Science Research Program through the National Research Foundation of Korea (NRF) - Ministry of Education [NRF-2017R1D1A1B03029093]
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A controllable and reversible transition of volatile and non-volatile resistive switching is presented in Ag/indium-gallium-zinc oxide (IGZO)/manganese oxide (MnO)/Pt bilayer resistive memory devices. The coexistence of volatile and non-volatile switching characteristics was demonstrated by controlling the current compliance during the SET process. With lower current compliance (<50 mu A), the formation of an unstable conducting filament presented typical diode-like non-volatile switching. A reversible transition from volatile to non-volatile switching could be obtained by applying a higher current compliance (>= 50 mu A). Moreover, highly uniform multistate memory characteristics were achieved by modulating the current compliance in the non-volatile switching region. The coexistence of volatile and multistate non-volatile resistive switching behaviors with a reversible transition demonstrates the capability of developing a selector element for crossbar arrays and the application for next generation multistate high-density storage with the same Ag/IGZO/MnO/Pt device.
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