Photoinduced Hysteresis of Graphene Field-Effect Transistors Due to Hydrogen-Complexed Defects in Silicon Dioxide

Published 2019 View Full Article

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Title
Photoinduced Hysteresis of Graphene Field-Effect Transistors Due to Hydrogen-Complexed Defects in Silicon Dioxide
Authors
Keywords
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Journal
ACS Applied Materials & Interfaces
Volume 11, Issue 12, Pages 12170-12178
Publisher
American Chemical Society (ACS)
Online
2019-03-07
DOI
10.1021/acsami.9b02400

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