Article
Physics, Multidisciplinary
Jia-Ning Liu, Feng-Xiang Chen, Wen Deng, Xue-Ling Yu, Li-Sheng Wang
Summary: Memtransistors, combining concepts of Memristor and field-effect transistor, can modulate characteristics through optical excitation and electrical stimuli, making them suitable for synaptic structures. Research shows that CdS memtransistor has good non-volatile Memristive characteristics and is influenced by incident wavelengths.
Article
Mathematics, Interdisciplinary Applications
Yuriy Gerasimov, Evgenii Zykov, Nikita Prudnikov, Max Talanov, Alexander Toschev, Victor Erokhin
Summary: This paper is dedicated to the experimental study of learning properties of systems, based on polyaniline (PANI) memristive devices. The study demonstrates the impact of signals with different forms, amplitudes, and frequencies on memristive device conductance, with pulse width modulation appearing as the most adequate method for implementing neuromorphic circuits.
CHAOS SOLITONS & FRACTALS
(2021)
Article
Materials Science, Multidisciplinary
Min Ju Yun, Doowon Lee, Sungho Kim, Christian Wenger, Hee-Dong Kim
Summary: This study reports the formation of free/self-rectifying resistive switching characteristics in a crystalline HfO2-based resistive switching memory device, which exhibits resistive switching behaviors without the need for a forming process. Additionally, the resistive switching performance is improved when using a top electrode with a lower work function.
MATERIALS CHARACTERIZATION
(2021)
Article
Nanoscience & Nanotechnology
Juan Ignacio Diaz Schneider, Paula Cecilia Angelome, Leticia Paula Granja, Cynthia Paula Quinteros, Pablo Eduardo Levy, Eduardo David Martinez
Summary: This paper investigates the resistive switching phenomena in percolative networks of silver nanowires coated with a thin layer of polyvinylpyrrolidone. The system exhibits different conductance levels and resistance state transitions under different environmental conditions, which is significant for the development of AgNWs-based electronics and in-hardware neuromorphic computing.
ADVANCED ELECTRONIC MATERIALS
(2022)
Article
Materials Science, Multidisciplinary
Guangdong Zhou, Dalong Kuang, Gang Wang, Xiaofeng He, Cunyun Xu, Jun Dong, Zhongjun Dai, Gaobo Xu, Dengchen Lu, Pengju Guo, Bai Sun, Qunliang Song
Summary: A long-standing controversy on whether resistive switching (RS) behavior can be triggered in macroscopic level is resolved by synthesizing ultra-long hybrid organic-inorganic perovskite halide single nanowire. The observed RS behavior is attributed to ion long-distance migration in the transition phase, providing deep comprehension on the HOIPH system in nanoscale electronic devices.
MATERIALS CHARACTERIZATION
(2023)
Review
Chemistry, Multidisciplinary
Dong Meng, Ran Zheng, Yepin Zhao, Elizabeth Zhang, Letian Dou, Yang Yang
Summary: Near-infrared (NIR)-absorbing organic semiconductors have revolutionized organic photovoltaic (OPV) research, enabling advancements in materials synthesis, device architecture, and efficiency improvement. This review categorizes NIR photovoltaic materials based on their absorption window and discusses the structure-property relationships to meet diverse application requirements. The potential of NIR materials in transparent OPVs, tandem OPVs, and photodetectors is highlighted, along with a discussion on the challenges and future directions for novel NIR materials in next-generation organic photovoltaics.
ADVANCED MATERIALS
(2022)
Article
Biochemistry & Molecular Biology
Zhiqiang Yu, Jiamin Xu, Baosheng Liu, Zijun Sun, Qingnan Huang, Meilian Ou, Qingcheng Wang, Jinhao Jia, Wenbo Kang, Qingquan Xiao, Tinghong Gao, Quan Xie
Summary: A simple hydrothermal process was used to synthesize α-Fe2O3 nanowire arrays with preferential growth orientation along the [110] direction. A W/a-Fe2O3/FTO memory device with nonvolatile resistive switching behavior was achieved. The device showed a resistance ratio (R-HRS/R-LRS) exceeding two orders of magnitude and preserved this ratio for more than 10(3)s without obvious decline. The carrier transport properties of the device were dominated by Ohmic conduction mechanism in the low resistance state and trap-controlled space-charge-limited current conduction mechanism in the high resistance state. The nonvolatile resistive switching behavior was suggested to be due to the formation and rupture of conducting nanofilaments modified by intrinsic oxygen vacancies. The α-Fe2O3 nanowire-based W/a-Fe2O3/FTO memory device has potential applications in next-generation nonvolatile memory devices.
Article
Nanoscience & Nanotechnology
Xiaohan Zhang, Xiaoning Zhao, Xuanyu Shan, Qiaoling Tian, Zhongqiang Wang, Ya Lin, Haiyang Xu, Yichun Liu
Summary: This study investigates the humidity effect on the resistive switching characteristics of Au/CH3NH3PbI3/FTO memristor, finding that the device performs well at moderate humidity (<75%), but degrades rapidly at higher humidity (90%). An obvious decrease in low resistance states with increasing humidity levels is observed, attributed to the reduction of the iodide migration barrier due to water-induced effects on the crystal lattice.
ACS APPLIED MATERIALS & INTERFACES
(2021)
Article
Engineering, Electrical & Electronic
Xinghui Wu, Nana Cui, Qiuhui Zhang, Xicheng Xiong, Tongjun Zhu, Qixing Xu
Summary: In this study, a Au/single ZnO nanowire/Au memristor was successfully prepared using the in situ electric dielectrophoretic assembly method. The device exhibited self-rectifying behavior with a back-to-back Schottky barrier. Further experiments revealed that the current of the device was controlled by the barrier enhancement layer generated during dielectrophoresis assembly. The device in a high-resistance state demonstrated low leakage current, high resistance ratio, and fast response time.
JOURNAL OF ELECTRONIC MATERIALS
(2022)
Article
Nanoscience & Nanotechnology
Haoyang Li, Weixia Lan, Xian Wu, Zhiqiang Zhu, Bin Wei
Summary: Organic resistive switching memory (ORSM) has great potential for neotype memory devices due to its simple architecture, low power consumption, high switching speed, and feasibility of large-area fabrication. This study achieved high ON/OFF ratios and outstanding device stability by doping bipolar materials into solution-processed ternary ORSM devices. The resistive switching performance was effectively improved by doping two bipolar materials in different blending concentrations, resulting in increased ON/OFF ratios and decreased operating voltages. The use of bipolar materials enhances the operation of ORSMs through energy level alignment and charge transfer.
Article
Polymer Science
Jonghyeon Yun, Daewon Kim
Summary: In an era of rapidly evolving artificial intelligence and 5G communications technologies, resistive random-access memory (RRAM) devices are being considered as next generation in-memory computing devices for wearable devices. This study investigates the influence of a polydopamine (PDA) layer on resistive switching in an aluminum/PDA/aluminum structure. The resistance-switching characteristics are analyzed, including the presence of an Al2O3 layer and changes in oxygen vacancies according to PDA coating time.
Article
Green & Sustainable Science & Technology
Zolile Wiseman Dlamini, Sreedevi Vallabhapurapu, Vijaya Srinivasu Vallabhapurapu
Summary: In this study, metal-insulator-metal devices with active layers made of raw organic cow milk were used to demonstrate the feasibility of organic material-based computer memory devices for reducing electronic waste. The devices, composed of fat-free, medium cream, and full cream raw cow milk active layers, were created without heat or electricity, and their use of cow milk as active layers makes them environmentally friendly. The medium-fat milk-based device showed memory characteristics driven by conductive filaments with switching at remarkably low voltages, while the fat-free and full-cream milk devices exhibited different behavior. The findings highlight the importance of milk fat and ion content in the morphology, transport, and switching of these devices.
Article
Chemistry, Physical
Kaijin Kang, Wei Hu, Xiaosheng Tang
Summary: This Perspective provides a condensed overview of halide perovskite RRAMs, including materials, device performance, switching mechanism, and potential applications. The challenges of halide perovskite films, device fabrication, memory performance reliability, and understanding of switching mechanism are discussed, along with potential paths for future research.
JOURNAL OF PHYSICAL CHEMISTRY LETTERS
(2021)
Article
Materials Science, Multidisciplinary
Xinyang Miao, Yawen Yu, Xuecong Liu, Honglei Zhan, Kun Zhao, Wanting Lu
Summary: Electrically induced resistive switching in natural reservoir shale is demonstrated, showing repeated switching between high-resistance and low-resistance states. The switching is controlled by voltage settings, duration of excitation, and measuring voltages. The shale can be switched over 40 times with a high on/off ratio and low energy consumption. This phenomenon is also observed in tight sandstones and other sedimentary rocks. Rocks with tunable properties show promise for data storage applications due to their low cost, simplicity, and disposal ease.
RESULTS IN PHYSICS
(2023)
Article
Chemistry, Multidisciplinary
Zhuhua Xu, Chuying Sun, Siyi Min, Zilong Ye, Cong Zhao, Jingzhou Li, Zhenghao Liu, Youdi Liu, Wen-Di Li, Man-Chung Tang, Qinghua Song, H. Y. Fu, Feiyu Kang, Jiangyu Li, Yang Shen, Cunjiang Yu, Guodan Wei
Summary: This work demonstrates a NIR nanograting Si/organic heterojunction photodetector which achieves narrowband photodetection without integrating optical filters. It obtains a FWHM of only 26 nm and fast response of 74 μs at 895 nm, with the ability to tailor the response peak from 895 to 977 nm. The sharp and narrow response NIR peak is attributed to the coherent overlapping between the NIR transmission spectrum of the organic layer and diffraction enhanced absorption peak of patterned nanograting Si substrates.
Review
Chemistry, Multidisciplinary
Guangxiong Duan, Shenming Huang, Zihao Feng, Peng Xie, Fan Zhang, Ye Zhou, Su-Ting Han
Summary: In recent years, a variety of hardware-based artificial sensory systems have attracted significant research interest in advanced artificial intelligence systems. This review focuses on the development of field-effect transistor (FET)-based gas sensory devices, discussing their mechanisms, gas recognition materials, strategies for improving sensing performance, and integration into artificial olfactory systems. The potential of FET-based sensory devices for next-generation intelligent sensory systems in fields such as environmental monitoring, health care, and military industries is also discussed.
ADVANCED FUNCTIONAL MATERIALS
(2023)
Review
Chemistry, Multidisciplinary
Kui Zhou, Gang Shang, Hsiao-Hsuan Hsu, Su-Ting Han, Vellaisamy A. L. Roy, Ye Zhou
Summary: This review provides an overview of recent advances in the synthesis of 2D metal oxides and their electronic applications. It discusses the tunable physical properties of 2D metal oxides related to structure, crystallinity, defects, and thickness. It also introduces advanced synthesis methods and various roles of 2D metal oxides in applications such as transistors, photodetectors, and solar cells.
ADVANCED MATERIALS
(2023)
Review
Chemistry, Multidisciplinary
Guohua Zhang, Jingrun Qin, Yue Zhang, Guodong Gong, Zi-Yu Xiong, Xiangyu Ma, Ziyu Lv, Ye Zhou, Su-Ting Han
Summary: The booming development of artificial intelligence (AI) requires faster physical processing units and more efficient algorithms. Reservoir computing (RC) has emerged as an alternative brain-inspired framework for fast learning and low training cost, and memristor-based physical RC systems have gained increasing popularity. This review summarizes the architectures, materials, and applications of memristor-implemented RC systems, explores the dynamic memory behaviors of memristors based on various material systems, and surveys recent advances in the application of memristor-based physical RC systems.
ADVANCED FUNCTIONAL MATERIALS
(2023)
Review
Chemistry, Multidisciplinary
Gang Liu, Ziyu Lv, Saima Batool, Ming-Zheng Li, Pengfei Zhao, Liangchao Guo, Yan Wang, Ye Zhou, Su-Ting Han
Summary: With the rapid growth of artificial intelligence, big data, the Internet of Things, and 5G/6G technologies, there is a growing need for humans to pursue life and manage personal or family health. The use of micro biosensing devices is crucial in bridging the gap between technology and personalized medicine.
Article
Chemistry, Physical
Cheng Zhang, Yang Li, Fei Yu, Guan Wang, Kuaibing Wang, Chunlan Ma, Xinbo Yang, Ye Zhou, Qichun Zhang
Summary: 2D ribbon-structured hydrogen-bonded organic frameworks (Nano-HOFs) embedded with transition metal nanoparticles are used as reliable memristive materials to mimic synaptic behaviors. The HOFs@Au-based memristor shows gradient electrical conductances and stable synaptic functions, making it suitable for neuromorphic computing and intelligent cognition applications.
Article
Physics, Applied
Yongbiao Zhai, Peng Xie, Jiahui Hu, Xue Chen, Zihao Feng, Ziyu Lv, Guanglong Ding, Kui Zhou, Ye Zhou, Su-Ting Han
Summary: To meet the requirements of data-intensive computing in the data-explosive era, researchers have extensively investigated brain-inspired neuromorphic computing for the past decade. However, challenges in integrating synaptic and neuronal devices in a single chip due to incompatible preparation processes have limited energy efficiency and scalability. Therefore, the development of a reconfigurable device with synaptic and neuronal functions in a single chip using the same materials and structures is highly desired. In this study, a reconfigurable hardware platform based on the polarization effect of 2D alpha-In2Se3 was designed, which can switch between emulating synapse and mimicking neuron. The application of this proof-of-concept device on a spiking neural network demonstrated its powerful learning ability and efficiency.
APPLIED PHYSICS REVIEWS
(2023)
Review
Nanoscience & Nanotechnology
Yan-Bing Leng, Yu-Qi Zhang, Ziyu Lv, Junjie Wang, Tao Xie, Shirui Zhu, Jingrun Qin, Runze Xu, Ye Zhou, Su-Ting Han
Summary: The essential step for developing neuromorphic systems is to construct more biorealistic elementary devices to exhibit highly separable responses in dynamic environmental circumstances. Traditional two-terminal memristors find it hard to achieve precise control of operation principles for large dynamic space, improved linearity and symmetry, multimodal operation as well as high-order complexity. Therefore, multiterminal memristors have been proposed to obtain precise modulation of memristive characteristics. This review discusses the recent progress, application, challenges and future prospects of multiterminal memristors in neuromorphic computing.
ADVANCED ELECTRONIC MATERIALS
(2023)
Review
Chemistry, Multidisciplinary
Shirui Zhu, Tao Xie, Ziyu Lv, Yan-Bing Leng, Yu-Qi Zhang, Runze Xu, Jingrun Qin, Ye Zhou, Vellaisamy A. L. Roy, Su-Ting Han
Summary: The development of artificial intelligence poses challenges to conventional machine vision due to its high latency and inefficient power consumption. By gaining insights into the function of each part of the visual pathway and using neuromorphic devices and circuits, machine vision systems can be improved in terms of robustness and energy efficiency.
ADVANCED MATERIALS
(2023)
Article
Chemistry, Physical
Kui Zhou, Ziqi Jia, Yao Zhou, Guanglong Ding, Xin-Qi Ma, Wenbiao Niu, Su-Ting Han, Jiyu Zhao, Ye Zhou
Summary: Neuromorphic computing has drawn extensive research interest in the development of novel neuromorphic memory devices, like memristors and bioinspired artificial synaptic devices, to overcome the limitations of conventional von Neumann architectures. Covalent organic frameworks (COFs), as crystalline porous polymers, offer customizable structures and pores for interactions with various entities such as photons, excitons, electrons, holes, ions, spins, and molecules, making them promising materials for neuromorphic electronics. This Perspective article focuses on the molecular design, thin-film processing, and neuromorphic applications of COF materials for neuromorphic memory devices, providing future directions and potential applications for COF-based neuromorphic electronics.
JOURNAL OF PHYSICAL CHEMISTRY LETTERS
(2023)
Editorial Material
Materials Science, Multidisciplinary
Ye Zhou, Su-Ting Han
SCIENCE AND TECHNOLOGY OF ADVANCED MATERIALS
(2023)
Article
Chemistry, Physical
Guanglong Ding, Su-Ting Han, Chi-Ching Kuo, Vellaisamy A. L. Roy, Ye Zhou
Summary: Porphyrin-based metal-organic frameworks (PP-MOFs) have attracted increasing attention in the field of neuromorphic electronics due to their superior optoelectronic characteristics, the ability to form 2D layered structure, and customizability. However, the related application research is in the initial stage, demanding a timely summary and guidance. This article highlights the PP-MOFs fabrication shift, from powder synthesis to high-quality film preparation, and introduces the advances and challenges in neuromorphic electronics, aiming to attract experts from various areas and promote the application of PP-MOFs.
Article
Materials Science, Multidisciplinary
Xue Chen, Bingkun Chen, Pengfei Zhao, Vellaisamy A. L. Roy, Su-Ting Han, Ye Zhou
Summary: Neuromorphic computing has gained a lot of attention due to its advantages of low power consumption, high speed, and high accuracy. Artificial synaptic devices that mimic biological synapses, particularly those based on nanowire technology, have shown potential for neuromorphic computing applications.
Article
Engineering, Electrical & Electronic
Wei Xu, Zhijuan Li, Zetao Fang, Bo Wang, Linze Hong, Gai Yang, Su-Ting Han, Xiaojin Zhao, Xiaoyi Wang
Summary: This article presents a CMOS-MEMS monolithic integrated thermal flow sensor system with high accuracy, low power consumption, and low noise. The sensor has high sensitivity, wide measurement range, and good linearity, which has been experimentally verified to be feasible.
IEEE JOURNAL OF SOLID-STATE CIRCUITS
(2023)
