Clarification of the relation between the grain structure of industrial grown mc-Si and the area fraction of electrical active defects by means of statistical grain structure evaluation

Published 2016 View Full Article

Authors

Keywords

Crystallographic orientation, Polycrystalline silicon, Grain boundary, Grain boundary engineering, Grain size distribution

Journal

ACTA MATERIALIA

Volume 106, Issue -, Pages 98-105

Publisher

Elsevier BV

Online

2016-01-21

DOI

10.1016/j.actamat.2015.12.049

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