Journal
OPTICS EXPRESS
Volume 26, Issue 26, Pages 33895-33905Publisher
OPTICAL SOC AMER
DOI: 10.1364/OE.26.033895
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Funding
- National Natural Science Foundation of China [11504265, 11304166, 11504187, 11774184]
- National Key Scientific Instrument and Equipment Development Project of China [2013YQ030595]
- National Key Research and Development Program of China [2016YFA0301102]
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The ultrafast nonlinear optical properties of bulk TIGaS2 crystal, a semiconductor with a layered structure, are studied by combining intensity dependent transmission, time-resolved transient absorption, and optical Kerr effect coupled to optical heterodyne detection. TIGaS2 demonstrates obvious two-photon absorption and electronic nonlinearities at 800 nm. The two-photon absorption coefficient and the nonlinear refractive index are determined to be of the order of 10(-10) cm/W and 10(-14) cm(2)/W, respectively. Furthermore, both the real and imaginary parts of the complex third-order susceptibility tensor elements are extracted. The large ultrafast optical nonlinearities make TIGaS2 a promising material for application in photonic techniques. (C) 2018 Optical Society of America under the terms of the OSA Open Access Publishing Agreement
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