Journal
ACS NANO
Volume 10, Issue 4, Pages 3936-3943Publisher
AMER CHEMICAL SOC
DOI: 10.1021/acsnano.5b07368
Keywords
anisotropic topological insulator; beta-Ag2Se nanowire; weak antilocalization; Aharonov Bohm oscillation; Shubnikov-de Haas oscillation; band inversion
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Funding
- National Research Foundation of Korea [NRF-2013R1A2A2A01069073, NRF-2012M3A2A1051686]
- National Research Foundation of Korea through the Basic Science Research Program [2015R1A2A2A01006833]
- National Research Foundation of Korea [2015R1A2A2A01006833] Funding Source: Korea Institute of Science & Technology Information (KISTI), National Science & Technology Information Service (NTIS)
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Single-crystalline beta-Ag2Se nanostructures, a new class of 3D topological insulators (TIs), were synthesized using the chemical vapor transport method. The topological surface states were verified by measuring electronic transport properties including the weak anti localization effect, Aharonov Bohm oscillations, and Shubnikov de Haas oscillations. First-principles band calculations revealed that the band inversion in beta-Ag2Se is caused by strong spin orbit coupling and Ag Se bonding hybridization. These investigations provide evidence of nontrivial surface state about beta-Ag2Se TIs that have anisotropic Dirac cones.
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