Journal
ACS NANO
Volume 10, Issue 3, Pages 3859-3864Publisher
AMER CHEMICAL SOC
DOI: 10.1021/acsnano.6b00987
Keywords
quantum spin Hall effect; quantum well states; Kane Mele model; Bi(111) bilayer
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Funding
- U.S. Department of Energy (DOE), Office of Science (OS), Office of Basic Energy Sciences [DE-FG02-07ER46383, DE-FG02-04ER46148, DE-FG02-05ER46200]
- NSF-MRSEC [DMR-1121252]
- National Science Foundation of China [11204133]
- Jiangsu Province Natural Science Foundation of China [BK2012393]
- Young Scholar Project of Nanjing University of Science and Technology
- Gordon and Betty Moore Foundation's EPiQS Initiative [GBMF4547]
- University of Wisconsin-Madison
- NSF [DMR 13-05583]
- U.S. Department of Energy (DOE) [DE-FG02-05ER46200] Funding Source: U.S. Department of Energy (DOE)
- Direct For Mathematical & Physical Scien
- Division Of Materials Research [1305583] Funding Source: National Science Foundation
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We report on the fabrication of a two-dimensional topological insulator Bi(111) bilayer on Sb nanofilms via a sequential molecular beam epitaxy growth technique. Our angle -resolved photoemission measurements demonstrate the evolution of the electronic band structure of the heterostructure as a function of the film thickness and reveal the existence of a two-dimensional spinful massless electron gas within the top Bi bilayer. Interestingly, our first principles calculation extrapolating the observed band structure shows that, by tuning down the thickness of the supporting Sb films into the quantum dimension regime, a pair of isolated topological edge states emerges in a partial energy gap at 0.32 eV above the Fermi level as a consequence of quantum confinement effect. Our results and.methodology of fabricating nanoscale heterostructures establish the Bi bilayer/Sb heterostructure as a platform of great potential for both ultra -low -energy -cost electronics and surface-based spintronics.
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