Near-ideal subthreshold swing MoS2 back-gate transistors with an optimized ultrathin HfO2 dielectric layer

Published 2018 View Full Article

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Title
Near-ideal subthreshold swing MoS2 back-gate transistors with an optimized ultrathin HfO2 dielectric layer
Authors
Keywords
-
Journal
NANOTECHNOLOGY
Volume 30, Issue 9, Pages 095202
Publisher
IOP Publishing
Online
2018-12-18
DOI
10.1088/1361-6528/aaf956

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