Article
Chemistry, Multidisciplinary
Sihan Chen, Jangyup Son, Siyuan Huang, Kenji Watanabe, Takashi Taniguchi, Rashid Bashir, Arend M. van der Zande, William P. King
Summary: This study demonstrates the use of AFM tip-based cleaning to improve the electrical performance of hBN-encapsulated monolayer MoS2 transistors. The cleaning process resulted in reduced PL linewidth and increased extrinsic mobility. The results suggest that tip-based cleaning can enhance the mobility of hBN-encapsulated monolayer MoS2 by reducing interface disorder.
Article
Chemistry, Physical
Yin Xia, Xinyu Chen, Jinchen Wei, Shuiyuan Wang, Shiyou Chen, Simin Wu, Minbiao Ji, Zhengzong Sun, Zihan Xu, Wenzhong Bao, Peng Zhou
Summary: This study reports an improved chemical vapor deposition synthesis method for growing large-area high-quality 2D semiconductor films with fast and non-toxic growth, which has the potential to reduce manufacturing costs.
Article
Engineering, Electrical & Electronic
Han Zhang, Bowen Shi, Lin Xu, Junfeng Yan, Wu Zhao, Zhiyong Zhang, Jing Lu
Summary: Research shows that monolayer MoS2 FETs with 5 nm gate length perform well in low-power applications but poorly in high-performance devices. After the introduction of negative capacitance dielectric layer, ML MoS2 p-DGFETs can meet the requirements for LP applications until the gate length scales down to 3 nm.
ACS APPLIED ELECTRONIC MATERIALS
(2021)
Article
Chemistry, Multidisciplinary
Isha M. Datye, Alwin Daus, Ryan W. Grady, Kevin Brenner, Sam Vaziri, Eric Pop
Summary: Strain can significantly enhance the electron mobility of two-dimensional semiconductors, which is crucial for applications such as flexible strain sensors.
Article
Chemistry, Multidisciplinary
Thomas F. Schranghamer, Najam U. Sakib, Muhtasim Ul Karim Sadaf, Shiva Subbulakshmi Radhakrishnan, Rahul Pendurthi, Ama Duffle Agyapong, Sergei P. Stepanoff, Riccardo Torsi, Chen Chen, Joan M. Redwing, Joshua A. Robinson, Douglas E. Wolfe, Suzanne E. Mohney, Saptarshi Das
Summary: This study investigates the impact of contact scaling on FET performance by examining Au contacts to monolayer MoS2 FETs with reduced channel length (LCH) and contact length (LC). The results show that when LC is scaled from 300 to 20 nm, Au contacts exhibit a reduction in the ON-current of approximately 2.5x, from 519 to 206 mu A/ mu m.
Article
Multidisciplinary Sciences
Jian Tang, Qinqin Wang, Jinpeng Tian, Xiaomei Li, Na Li, Yalin Peng, Xiuzhen Li, Yanchong Zhao, Congli He, Shuyu Wu, Jiawei Li, Yutuo Guo, Biying Huang, Yanbang Chu, Yiru Ji, Dashan Shang, Luojun Du, Rong Yang, Wei Yang, Xuedong Bai, Dongxia Shi, Guangyu Zhang
Summary: The authors present a gate-first fabrication technique that allows the fabrication of wafer-scale monolayer MoS2 integrated circuits (ICs) with high performance and low power consumption. The developed ultra-thin dielectric/metal gate structure enables the realization of thin film transistors based on high-quality monolayer MoS2 on both rigid and flexible substrates. The demonstrated ICs operate at voltages below 1 V, making them potentially useful for portable, wearable, and implantable electronics.
NATURE COMMUNICATIONS
(2023)
Article
Chemistry, Physical
Zheng Wei, Jian Tang, Xuanyi Li, Zhen Chi, Yu Wang, Qinqin Wang, Bo Han, Na Li, Biying Huang, Jiawei Li, Hua Yu, Jiahao Yuan, Hailong Chen, Jiatao Sun, Lan Chen, Kehui Wu, Peng Gao, Congli He, Wei Yang, Dongxia Shi, Rong Yang, Guangyu Zhang
Summary: This study achieved uniform oxygen doping of wafer-scale monolayer MoS2 and found a reduction in bandgaps with increased oxygen-doping levels. Devices fabricated based on these doped MoS2 monolayers demonstrated excellent electronic performances, showing promise for their potential large-scale applications in electronics.
Article
Nanoscience & Nanotechnology
Hyeyeon Sunwoo, Woong Choi
Summary: In this study, highly stable and reversible n-type doping of monolayer MoS2 was achieved using thermal treatment in NMP. The thermal treatment in NMP improved the performance of MoS2 transistors and the doping effect remained effective for over 12 months.
Article
Chemistry, Multidisciplinary
Chakrit Nualchimplee, Kulpavee Jitapunkul, Varisara Deerattrakul, Thammanoon Thaweechai, Weekit Sirisaksoontorn, Wisit Hirunpinyopas, Pawin Iamprasertkun
Summary: A novel method was introduced to prepare MoO3 nanorods, showing higher capacitance performance than traditional 2H-MoS2. This study expands the understanding of ion intercalation behavior of TMDs and TMOs in aqueous media.
NEW JOURNAL OF CHEMISTRY
(2022)
Article
Nanoscience & Nanotechnology
Xiaohan Wu, Yuqian Gu, Ruijing Ge, Martha Serna, Yifu Huang, Jack C. Lee, Deji Akinwande
Summary: This study investigates the use of electron irradiation to improve the reliability of monolayer molybdenum disulfide memory devices. The research confirms the effect of irradiation on the devices and proposes a clustering failure mechanism for the improved reliability.
NPJ 2D MATERIALS AND APPLICATIONS
(2022)
Article
Physics, Multidisciplinary
Li Lu, Zhang Yang-Kun, Shi Dong-Xia, Zhang Guang-Yu
Summary: The research summarized the preparation of monolayer MoS2 films and the characteristics of devices with excellent optical and electrical properties. It is of guiding significance for the basic and application research of MoS2, and is also universal and instructive for other 2D transition metal dichalcogenides.
ACTA PHYSICA SINICA
(2022)
Article
Chemistry, Physical
Wen-Hao Chang, Chun- Lu, Tilo H. Yang, Shu-Ting Yang, Kristan Bryan Simbulan, Chih-Pin Lin, Shang-Hsien Hsieh, Jyun-Hong Chen, Kai-Shin Li, Chia-Hao Chen, Tuo-Hung Hou, Ting-Hua Lu, Yann-Wen Lan
Summary: The study reveals that negative differential resistance (NDR) can be observed in monolayer MoS2 by introducing a specific amount of sulfur vacancy defects. This finding is significant for the development of new electronic devices based on defect engineering in two-dimensional materials.
NANOSCALE HORIZONS
(2022)
Article
Chemistry, Multidisciplinary
Xuewen Wang, Bolun Wang, Qinghua Zhang, Yufei Sun, Enze Wang, Hao Luo, Yonghuang Wu, Lin Gu, Huanglong Li, Kai Liu
Summary: Synaptic devices based on 2D-layered materials with artificially engineered grain boundaries have been developed, exhibiting responsiveness to various stimuli, low energy consumption, and plasticity characteristics. This provides an effective way to fabricate lateral synaptic devices for practical application development and sheds light on controllable electrical state switching for neuromorphic computing.
ADVANCED MATERIALS
(2021)
Article
Chemistry, Physical
Jiankun Xiao, Zhuo Kang, Baishan Liu, Xiankun Zhang, Junli Du, Kuanglei Chen, Huihui Yu, Qingliang Liao, Zheng Zhang, Yue Zhang
Summary: High contact resistance in monolayer MoS2 transistors limits their electrical performance, but a proposed end-bond contact scheme achieves ultra-low contact resistance and high-performance saturation current density.
Article
Chemistry, Physical
Yaping Miao, Hongwei Bao, Wei Fan, Yan Li, Fei Ma
Summary: The study reveals that N doping has a significant impact on the adsorption behaviors of atoms and gas molecules on MoS2 monolayer, such as enhancing the adsorption sensitivity of NH3 and NO2 molecules and improving the adsorption energy. Additionally, it is found that N doping effectively reduces the migration barrier of NO2 gas molecules on MoS2.
SURFACES AND INTERFACES
(2021)
Article
Chemistry, Multidisciplinary
Feier Fang, Yi Wan, Henan Li, Shaofan Fang, Fu Huang, Bo Zhou, Ke Jiang, Vincent Tung, Lain-Jong Li, Yumeng Shi
Summary: This study integrates two-dimensional perovskites with transition metal dichalcogenide monolayers to enhance photosensitivity and photoresponse. The vertically stacked heterostructure photodetector shows high detectivity and fast response time.
Article
Chemistry, Multidisciplinary
Chang-Ju Liu, Yi Wan, Lain-Jong Li, Chih-Pin Lin, Tuo-Hung Hou, Zi-Yuan Huang, Vita Pi-Ho Hu
Summary: Research indicates that monolayer 2DM FET with superior electrostatics is beneficial in reducing read-write conflicts in SRAM cells at scaled technology nodes, while monolayer 2DM SRAM shows lower cell read access time and write time compared to bilayer and trilayer 2DM SRAM cells at fixed leakage power.
ADVANCED MATERIALS
(2022)
Review
Chemistry, Multidisciplinary
Yi Wan, Jui-Han Fu, Chih-Piao Chuu, Vincent Tung, Yumeng Shi, Lain-Jong Li
Summary: This review provides a systematic summary of the critical factors for synthesizing single-orientation 2D layers, with a focus on the role of atomic edge-guided epitaxial growth in the wafer-scale growth of single-crystal 2D layers.
CHEMICAL SOCIETY REVIEWS
(2022)
Article
Materials Science, Multidisciplinary
Pin Tian, Libin Tang, Jinzhong Xiang, Shu Ping Lau, Shouzhang Yuan, Dengquan Yang, Lain-Jong Li, Kar Seng Teng
Summary: The study developed an easy method for liquid-phase catalytic growth of graphene, that can transform graphene quantum dots into graphene films at room temperature. This method has advantages of environmental-friendliness, high yields, low cost, and a wide choice of substrates. The bandgap of the graphene films can be tuned by post-annealing.
JOURNAL OF MATERIALS CHEMISTRY C
(2022)
Article
Chemistry, Multidisciplinary
Bo Liu, Ying-Feng Chang, Juzhe Li, Xu Liu, Le An Wang, Dharmendra Verma, Hanyuan Liang, Hui Zhu, Yudi Zhao, Lain-Jong Li, Tuo-Hung Hou, Chao-Sung Lai
Summary: The fast development of the Internet of Things (IoT) brings security challenges, and a true random number generator (TRNG) based on stochastic physical phenomena, such as the Bi2O2Se-based TRNG, shows potential in ensuring data security. Compared to traditional memristors, the Bi2O2Se layer has unique properties for more reliable analogue/digital random number generation.
Article
Chemistry, Multidisciplinary
Hao-Yu Chen, Hung-Chang Hsu, Chuan-Chun Huang, Ming-Yang Li, Lain-Jong Li, Ya-Ping Chiu
Summary: This study utilizes light-modulated scanning tunneling microscopy and quasiparticle interference technique to reveal the unexplored momentum-forbidden electronic quantum states in transition metal dichalcogenide monolayers. The results highlight the large spin-splitting energy and the band renormalization dependent on photoexcited carrier density, emphasizing the importance of excited-state distribution in band renormalization.
Article
Chemistry, Multidisciplinary
Merfat M. Alsabban, Mathan Kumar Eswaran, Karthik Peramaiah, Wandi Wahyudi, Xiulin Yang, Vinoth Ramalingam, Mohamed N. Hedhili, Xiaohe Miao, Udo Schwingenschlogl, Lain-Jong Li, Vincent Tung, Kuo-Wei Huang
Summary: This paper reports a electrocatalyst with activity and durability in an alkaline medium, and reveals its high efficiency reaction mechanism through theoretical studies.
Article
Chemistry, Multidisciplinary
Caleb Z. Zerger, Linsey K. Rodenbach, Yi-Ting Chen, Benjamin Safvati, Morgan Z. Brubaker, Steven Tran, Tse-An Chen, Ming-Yang Li, Lain-Jong Li, David Goldhaber-Gordon, Hari C. Manoharan
Summary: This research demonstrates that the Cu(111) surface state under wafer-scale hBN is homogeneous in energy and spectral weight over nanometer length scales and across atomic terraces. However, a new spectral feature that is not observed on bare Cu(111) varies with atomic registry and shares the spatial periodicity of the hBN/Cu(111) moire.
Article
Chemistry, Physical
Cong Wang, Chao Xu, Xuyun Guo, Ning Zhang, Jianmin Yan, Jiewei Chen, Wei Yu, Jing-Kai Qin, Ye Zhu, Lain-Jong Li, Yang Chai
Summary: In this study, a Cu foil-assisted alloy-buffer-controlled growth method was designed to epitaxially grow aligned single-crystalline 2D tellurium (Te) on an insulating mica substrate. The in-situ formation of Cu-Te alloy played a key role in alleviating the spatial and temporal non-uniformity of precursor, resulting in the controllable growth of high-quality and highly aligned 2D Te.
Article
Multidisciplinary Sciences
Jing-Kai Huang, Yi Wan, Junjie Shi, Ji Zhang, Zeheng Wang, Wenxuan Wang, Ni Yang, Yang Liu, Chun-Ho Lin, Xinwei Guan, Long Hu, Zi-Liang Yang, Bo-Chao Huang, Ya-Ping Chiu, Jack Yang, Vincent Tung, Danyang Wang, Kourosh Kalantar-Zadeh, Tom Wu, Xiaotao Zu, Liang Qiao, Lain-Jong Li, Sean Li
Summary: The scaling of silicon metal-oxide-semiconductor field-effect transistors has been successful, but with the thinning of silicon at smaller technology nodes, new challenges arise. In this study, researchers explore the use of ultrahigh-kappa single-crystalline perovskite strontium-titanium-oxide membranes as gate dielectrics for 2D field-effect transistors. These membranes have desirable properties and can mitigate the issues related to using ultrahigh-kappa dielectrics.
Article
Chemistry, Physical
Tung-Yuan Yu, Kun-Lin Lin, Pin-Guang Chen, Tung-Huan Chou
Summary: This study investigated the thermal stability and material properties of HfO2 thin films on Si substrates. The results showed that wet chemical oxidation improved the thermal stability of HfO2 films and reduced oxide leakage current, which is beneficial for developing efficient and thermally stable HfO2 gate oxides in Si-based integrated circuit devices.
SURFACE AND INTERFACE ANALYSIS
(2022)
Article
Chemistry, Physical
Jie Shen, Yichen Cai, Chenhui Zhang, Wan Wei, Cailing Chen, Lingmei Liu, Kuiwei Yang, Yinchang Ma, Yingge Wang, Chien-Chih Tseng, Jui-Han Fu, Xinglong Dong, Jiaqiang Li, Xi-Xiang Zhang, Lain-Jong Li, Jianwen Jiang, Ingo Pinnau, Vincent Tung, Yu Han
Summary: Carbon nanomaterials like graphene have interesting molecular transport properties, but achieving regular channels over a large area requires perfect alignment. In this study, we developed a large-area two-dimensional conjugated-polymer-framework with regular pore distribution, resulting in 99.5% salt rejection by forward osmosis. The design and fabrication of these membranes provide a promising route for developing carbon-based membranes for precise molecular separation.
Article
Engineering, Electrical & Electronic
Po Chun Chen, Peter M. Asbeck, Shadi A. Dayeh
Summary: To improve the quality, resolution, and quantity of information transmitted in RF front end modules, compact tunable filters with high power handling capability and high linearity are needed. GaN varactors are preferred due to their high quality factor figure of merit. However, leakage currents and threading dislocations have been limitations for GaN varactors. In this work, we propose a novel device architecture and utilize GaN on Qromis Substrate Technology (QST) wafers to overcome these limitations and achieve high Q factors.
IEEE TRANSACTIONS ON ELECTRON DEVICES
(2023)
Article
Physics, Applied
Muzafar Ahmad Rather, Loganathan Ravi, Tung-Yuan Yu, Chien-Ting Wu, Kun-Lin Lin, Kun-Yu Lai, Jen-Inn Chyi
Summary: The range of applications of common III-nitride semiconductors (Al, Ga, In)N can be expanded through bandgap engineering via the inclusion of boron and forming heterojunctions. The band alignments of B(Al, Ga)N alloys with common III-nitrides were investigated using x-ray photoemission spectroscopy. Type-I straddling-gap band alignment was identified in the B0.06Ga0.94N/AlN heterojunction, while a type-II band alignment was observed in the B0.06Ga0.94N/GaN heterojunction. Type-I band alignment was deduced for both the B0.13Al0.87N/AlN and B0.13Al0.87N/GaN heterojunctions.
APPLIED PHYSICS LETTERS
(2023)
Article
Nanoscience & Nanotechnology
Jui-Han Fu, Jiacheng Min, Che-Kang Chang, Chien-Chih Tseng, Qingxiao Wang, Hayato Sugisaki, Chenyang Li, Yu-Ming Chang, Ibrahim Alnami, Wei-Ren Syong, Ci Lin, Feier Fang, Lv Zhao, Tzu-Hsuan Lo, Chao-Sung Lai, Wei-Sheng Chiu, Zih-Siang Jian, Wen-Hao Chang, Yu-Jung Lu, Kaimin Shih, Lain-Jong Li, Yi Wan, Yumeng Shi, Vincent Tung
Summary: The large-scale batch growth of single-crystal 2D semiconducting transition metal dichalcogenides (TMDs) is crucial for pushing the limits of semiconductor technology. This study demonstrates that the interaction between TMD grains and the exposed oxygen-aluminium atomic plane in sapphire plays a more dominant role than step-edge docking in controlling the single-crystal epitaxy of these materials. Reconstructing the surfaces of the sapphire substrate to a single type of atomic plane enables the epitaxial growth of TMDs without the aid of step edges.
NATURE NANOTECHNOLOGY
(2023)