4.8 Article

Band Gap Renormalization, Carrier Multiplication, and Stark Broadening in Photoexcited Black Phosphorus

Journal

NANO LETTERS
Volume 19, Issue 1, Pages 488-493

Publisher

AMER CHEMICAL SOC
DOI: 10.1021/acs.nanolett.8b04344

Keywords

Black phosphorus; ultrafast; ARPES; Stark; band gap renormalization

Funding

  1. EU/FP7 [280555]
  2. Investissement d'Avenir Labex PALM [ANR-10-LABX-0039-PALM]
  3. Equipex ATTOLAB [ANR11-EQPX0005-ATTOLAB]
  4. ANR Iridoti [ANR-13-IS04-0001]
  5. Region Ile-de-France (DIM OxyMORE)
  6. China Scholarship Council (CSC) [201706170091]
  7. Agence Nationale de la Recherche (ANR) [ANR-13-IS04-0001] Funding Source: Agence Nationale de la Recherche (ANR)

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We investigate black phosphorus by time- and angle-resolved photoelectron spectroscopy. The electrons excited by 1.57 eV photons relax down to a conduction band minimum within 1 ps. Despite the low band gap value, no relevant amount of carrier multiplication could be detected at an excitation density 3-6 x 10(19) cm(-3). In the thermalized state, the band gap renormalization is negligible up to a photoexcitation density that fills the conduction band by 150 meV. Astonishingly, a Stark broadening of the valence band takes place at an early delay time. We argue that electrons and holes with a high excess energy lead to inhomogeneous screening of near surface fields. As a consequence, the chemical potential is no longer pinned in a narrow impurity band.

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