Journal
MICROSYSTEM TECHNOLOGIES-MICRO-AND NANOSYSTEMS-INFORMATION STORAGE AND PROCESSING SYSTEMS
Volume 25, Issue 8, Pages 3083-3089Publisher
SPRINGER HEIDELBERG
DOI: 10.1007/s00542-018-4180-z
Keywords
-
Categories
Funding
- Center of Innovation (COI) program of the Japan Science and Technology Agency
- Japan Society for the Promotion of Science [25220904, 16K13650, 16K18090]
- Grants-in-Aid for Scientific Research [16K18090, 16K13650] Funding Source: KAKEN
Ask authors/readers for more resources
Graphene nano-electro-mechanical switches are promising components due to their excellent switching performance such as low pull-in voltage and low contact resistance. Mass fabrication with an appropriate counter electrode remains challenging. In this work, we report the stacking of nanocrystalline graphene (NCG) with a 70-nm dielectric separation layer. The buried NCG layer is contacted through the formation of vias and acts as actuation electrode. After metallization, the top 7.5-nm thin NCG layer is patterned to form double-clamped beams, and the structure is released by hydrofluoric acid etching. By applying a voltage between the top and buried NCG layer, a step-like current increase is observed below 1.5V, caused by the contact of the movable beam with the buried NCG. No pull-out is observed due to the thin sacrificial layer and high beam length, resulting in low mechanical restoring force. We discuss the possible applications of the NCG stacking approach to realize nano-electro-mechanical contact switches and advanced logical components such as a AND logic.
Authors
I am an author on this paper
Click your name to claim this paper and add it to your profile.
Reviews
Recommended
No Data Available