4.8 Article

ALD Zn(O,S) Thin Films' Interfacial Chemical and Structural Configuration Probed by XAS

Journal

ACS APPLIED MATERIALS & INTERFACES
Volume 8, Issue 23, Pages 14323-14327

Publisher

AMER CHEMICAL SOC
DOI: 10.1021/acsami.6b04000

Keywords

X-ray absorption near edge structure (XANES); Zn(O,S); atomic layer deposition (ALD); ternary oxide films; electronic structure

Funding

  1. Diversifying Academia Recruiting Excellence of Stanford University
  2. Austrian Research Fund (FWF) [J3505-N20]
  3. Austrian Science Fund (FWF) [J3505] Funding Source: Austrian Science Fund (FWF)
  4. Austrian Science Fund (FWF) [J 3505] Funding Source: researchfish

Ask authors/readers for more resources

The ability to precisely control interfaces of atomic layer deposited (ALD) zinc oxysulfide (Zn(O,S)) buffer layers to other layers allows precise tuning of solar cell performance. The O K- and S K-edge X-ray absorption near edge structure (XANES) of similar to 24 nm thin Zn(O,S) films reveals the chemical and structural influences of their interface with ZnO, a common electrode material and diffusion barrier in solar cells. We observe that sulfate formation at oxide/sulfide interfaces is independent of film composition, a result of sulfur diffusion toward interfaces. Leveraging sulfurs diffusivity, we propose an alternative ALD process in which the zinc precursor pulse is bypassed during H2S exposure. Such a process yields similar results to the nanolaminate deposition method and highlights mechanistic differences between ALD sulfides and oxides. By identifying chemical species and structural evolution at sulfide/oxide interfaces, this work provides insights into increasing thin film solar cell efficiencies.

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