Journal
ACS APPLIED MATERIALS & INTERFACES
Volume 8, Issue 18, Pages 11189-11193Publisher
AMER CHEMICAL SOC
DOI: 10.1021/acsami.6b01568
Keywords
interface property; atomic layer deposition; Al2O3; ultraviolet/ozone treatment; MoS2; capacitance-voltage
Funding
- National Research Foundation of Korea [NRF-2013R1A1A2008191, NRF-2013K1A4A3055679]
- Industrial Strategic Technology Development Program [10045145]
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We report the interface properties of atomic-layer-deposited Al2O3 thin films on ultraviolet/ozone (UV/O-3)-treated multilayer MoS2 crystals. The formation of S-O bonds on MoS2 after low-power UV/O-3 treatment increased the surface energy, allowing the subsequent deposition of uniform Al2O3 thin films. The capacitance-voltage measurement of Au-Al2O3-MoS2 metal oxide semiconductor capacitors indicated n-type MoS2 with an electron density of similar to 10(17) cm(-3) and a minimum interface trap density of similar to 10(11) cm(-2) eV(-1). These results demonstrate the possibility of forming, a high-quality Al2O3-MoS2 interface by, proper UV/O-3 treatment, providing important implications for their integration into field-effect transistors.
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