Journal
ACS APPLIED MATERIALS & INTERFACES
Volume 8, Issue 36, Pages 23763-23773Publisher
AMER CHEMICAL SOC
DOI: 10.1021/acsami.6b08558
Keywords
atomic layer deposition; Schottky junctions; MIS junctions; photoanodes; photovoltage; TiO2 alloys
Funding
- Stanford Global Climate and Energy Project
- National Science Foundation program [CBET-1336844]
- Science Foundation (SFI) under the US-Ireland R&D Partnership Program [SFI/13/US/12543]
- Fannie and John Hertz Foundation
- Div Of Chem, Bioeng, Env, & Transp Sys
- Directorate For Engineering [1336844] Funding Source: National Science Foundation
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We synthesized nanoscale TiO2RuO2 alloys by atomic layer deposition (ALD) that possess a high work function and are highly conductive. As such, they function as good Schottky contacts to extract photogenerated holes from n-type silicon while simultaneously interfacing with water oxidation catalysts. The ratio of TiO2 to RuO2 can be precisely controlled by the number of ALD cycles for each precursor. Increasing the composition above 16% Ru sets the electronic conductivity and the metal work function. No significant Ohmic loss for hole transport is measured as film thickness increases from 3 to 45 nm for alloy compositions >= 16% Ru. Silicon photoanodes with a 2 nm SiO2 layer that are coated by these alloy Schottky contacts having compositions in the range of 1346% Ru exhibit average photovoltages of 525 mV, with a maximum photovoltage of 570 mV achieved. Depositing TiO2RuO2 alloys on nSi sets a high effective work function for the Schottky junction with the semiconductor substrate, thus generating a large photovoltage that is isolated from the properties of an overlying oxygen evolution catalyst or protection layer.
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