4.5 Article

Molecular Dynamics of Ion Conduction through the Selectivity Filter of the NaVAb Sodium Channel

Journal

JOURNAL OF PHYSICAL CHEMISTRY B
Volume 122, Issue 44, Pages 10126-10142

Publisher

AMER CHEMICAL SOC
DOI: 10.1021/acs.jpcb.8b09678

Keywords

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Funding

  1. National Institute of Health (NIH) [R0I-GM062342]
  2. NIH
  3. Biological Sciences Division of the University of Chicago and Argonne National Laboratory [1S10OD018495-01]

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The determination of the atomic structures of voltage-gated bacterial sodium channels using X-ray crystallography has provided a first view of this family of membrane proteins. Molecular dynamics simulations offer one approach to clarify the underlying mechanism of permeation and selectivity in these channels. However, it appears that the intracellular gate of the pore domain is either closed or only open partially in the available X-ray structures. The lack of structure with a fully open intracellular gate poses a special challenge to computational studies aimed at simulating ion conduction. To circumvent this problem, we simulated a model of the Na(V)Ab channel in which the transmembrane SS and S6 helices of the pore domain have been truncated to provide direct open access to the intracellular entryway to the pore. Molecular dynamics simulations were carried out over a range of membrane potential and ion concentration of sodium and potassium. The simulations show that the NavAb selectivity filter is essentially a cationic pore supporting the conduction of ions at a rate comparable to aqueous diffusion with no significant selectivity for sodium. Conductance and selectivity vary as a function of ion concentration for both cations. Permeation occurs primarily via a knock-on mechanism for both sodium and potassium, although the ion ordering in single file along the pore is not strictly maintained. The character of the outward current appears quite different from the inward current, with a buildup on ions in the selectivity filter prior to escape toward the extracellular side, indicating the presence of a rectification effect that is overcome by nonphysiological applied voltages.

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