Journal
JOURNAL OF MAGNETISM AND MAGNETIC MATERIALS
Volume 469, Issue -, Pages 306-314Publisher
ELSEVIER
DOI: 10.1016/j.jmmm.2018.08.054
Keywords
Ferromagnetic materials; Curie temperature; Half-metal; Van Hove singularity; Spintronic applications
Funding
- National Supercomputer Center in Guangzhou
- Three Big Constructions Supercomputing Application Cultivation Projects
- Leading Talent Program of Guangdong Special Projects
- [NKRDPC-2017YFA0206203]
- [NSFC-11574404]
- [NSFG-2015A030313176]
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It is essential to explore two-dimensional (2D) material with magnetic ordering in new generation spintronic devices. Particularly, the seeking of room-temperature 2D ferromagnetic (FM) materials is a hot topic of current research. Here, we study magnetism of the Mn-doped and electron-doped SiC monolayer using first-principle calculations. For the Mn-doped SiC monolayer, we find that either electron or hole could mediate the ferromagnetism in the system and the Curie temperature (T-c) can be improved by appropriate carrier doping. The codoping strategy is also discussed on improving T-c. The transition between antiferromagnetic and FM phase can be found by strain engineering. The T-c is improved above room temperature (RT) under the strain larger than 0.06. Moreover, the Mn-doped SiC monolayer develops half-metal at the strain range of 0.05-0.1. On the other hand, the direct electron doping can induce ferromagnetism due to the van Hove singularity in density of states of the conduction band edge of the SiC monolayer. The T-c is found to be around RT. These fascinating controllable electronic and magnetic properties are desired for spintronic applications.
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