4.3 Article

Tin oxide coating by nonvacuum-based mist chemical vapor deposition on stainless steel separators for polymer electrolyte fuel cells

Journal

JAPANESE JOURNAL OF APPLIED PHYSICS
Volume 57, Issue 11, Pages -

Publisher

IOP PUBLISHING LTD
DOI: 10.7567/JJAP.57.117103

Keywords

-

Funding

  1. JST A-STEP [AS2621259M]

Ask authors/readers for more resources

Coating of stainless steel (SUS) separators of polymer electrolyte fuel cells (PEFCs) with tin oxide (SnO2) thin films by nonvacuum-based mist chemical vapor deposition technology has been proposed for cost-effective and highly endurable cells. Fluorine-doped SnO2 resulted in low electrical resistivity of the films and high corrosive resistance of the SnO2-coated SUS separators. The novel pretreatment of SUS substrates successfully enhanced the strength of SnO2 adhesion to the substrates. The PEFCs composed of the SnO2-coated SUS separators showed stable operation for more than 1000 h without the SnO2 films peeling off of or severe degradation of the separators. The maximum power density achieved by using the SnO2-coated SUS separators was similar to 0.3 W/cm(2), which was expected to be improved by optimizing the fabrication processes of the SnO2 thin films so that the series resistance of the SnO2/SUS can be sufficiently low. (C) 2018 The Japan Society of Applied Physics

Authors

I am an author on this paper
Click your name to claim this paper and add it to your profile.

Reviews

Primary Rating

4.3
Not enough ratings

Secondary Ratings

Novelty
-
Significance
-
Scientific rigor
-
Rate this paper

Recommended

Article Physics, Condensed Matter

Control of Crystal Structure of Ga2O3 on Sapphire Substrate by Introduction of -(AlxGa1-x)2O3 Buffer Layer

Riena Jinno, Takayuki Uchida, Kentaro Kaneko, Shizuo Fujita

PHYSICA STATUS SOLIDI B-BASIC SOLID STATE PHYSICS (2018)

Article Physics, Applied

Impact of local arrangement of Mg and Zn atoms in rocksalt-structured MgxZn1-xO alloys on bandgap and deep UV cathodoluminescence peak energies

T. Onuma, M. Ono, K. Ishii, K. Kaneko, T. Yamaguchi, S. Fujita, T. Honda

APPLIED PHYSICS LETTERS (2018)

Article Physics, Applied

Electrical properties of α-Ir2O3/α-Ga2O3 pn heterojunction diode and band alignment of the heterostructure

Shin-ichi Kan, Shu Takemoto, Kentaro Kaneko, Isao Takahashi, Masahiro Sugimoto, Takashi Shinohe, Shizuo Fujita

APPLIED PHYSICS LETTERS (2018)

Article Physics, Applied

Pure deep-ultraviolet cathodoluminescence from rocksalt-structured MgZnO grown with carbon-free precursors

Kyohei Ishii, Mizuki Ono, Kentaro Kaneko, Takeyoshi Onuma, Tohru Honda, Shizuo Fujita

APPLIED PHYSICS EXPRESS (2019)

Article Physics, Applied

Excitation-current-density and temperature dependences of deep UV cathodoluminescence in rocksalt-structured MgxZn1-xO films

M. Ono, K. Ishii, K. Kaneko, T. Yamaguchi, T. Honda, S. Fujita, T. Onuma

JOURNAL OF APPLIED PHYSICS (2019)

Article Physics, Applied

Enhancement of epitaxial lateral overgrowth in the mist chemical vapor deposition of ?-Ga2O3 by using a-plane sapphire substrate

Riena Jinno, Nobuhiro Yoshimura, Kentaro Kaneko, Shizuo Fujita

JAPANESE JOURNAL OF APPLIED PHYSICS (2019)

Article Physics, Applied

Impact of hydrochloric acid on the epitaxial growth of In2O3films on (0001)α-Al2O3substrates by mist CVD

Tomohiro Yamaguchi, Subaru Takahashi, Takanori Kiguchi, Atsushi Sekiguchi, Kentaro Kaneko, Shizuo Fujita, Hiroki Nagai, Mitsunobu Sato, Takeyoshi Onuma, Tohru Honda

APPLIED PHYSICS EXPRESS (2020)

Article Physics, Applied

Thermal stability of α-(AlxGa1-x)2O3 films grown on c-plane sapphire substrates with an Al composition up to 90%

Riena Jinno, Kentaro Kaneko, Shizuo Fujita

Summary: The thermal stability of alpha-(AlxGa1-x)(2)O-3 films grown on c-plane sapphire substrates was explored through annealing at different temperatures. It was found that lower Al composition led to phase transformation to the most stable phase for Ga2O3, while higher Al composition improved thermal stability. Films with x = 0.45 maintained the corundum structure after annealing at 950 degrees C, while layers with Al contents above 0.6 remained stable and did not undergo phase transformation at 1100 degrees C.

JAPANESE JOURNAL OF APPLIED PHYSICS (2021)

Article Physics, Applied

Ultra-wide bandgap corundum-structured p-type α-(Ir,Ga)2O3 alloys for α-Ga2O3 electronics

Kentaro Kaneko, Yasuhisa Masuda, Shin-ichi Kan, Isao Takahashi, Yuji Kato, Takashi Shinohe, Shizuo Fujita

Summary: Ultra-wide bandgap p-type alpha-(Ir,Ga)(2)O-3 films were achieved through unintentional or Mg doping, showing potential for high-quality pn heterojunction formation with n-type alpha-Ga2O3 due to their similar crystal structures and good lattice matching. Initial testing of a pn junction diode composed of these materials demonstrated promising performance.

APPLIED PHYSICS LETTERS (2021)

Article Physics, Condensed Matter

Analysis of Deep Traps in Mist Chemical Vapor Deposition-Grown n-Type α-Ga2O3 by Photocapacitance Method

Hitoshi Takane, Kentaro Kaneko, Takashi Shinohe, Shizuo Fujita

Summary: Deep traps in n-type alpha-Ga2O3 grown by mist chemical vapor deposition are analyzed, revealing trap levels at approximately 2.0 eV, 2.5 eV, and 3.2 eV. The concentrations of these traps are lower than previously reported for alpha-Ga2O3, and a large Frank-Condon shift indicates a high degree of lattice coupling in the midgap state of alpha-Ga2O3.

PHYSICA STATUS SOLIDI B-BASIC SOLID STATE PHYSICS (2021)

Article Physics, Applied

Initial nucleation scheme of Ga2O3 on (0001) sapphire by mist CVD for the growth of α-phase

Hitoshi Takane, Kentaro Kaneko, Yuichi Ota, Shizuo Fujita

Summary: The study compared the growth characteristics of α-Ga2O3 under different growth methods and revealed the unique mechanism of mist CVD-grown α-Ga2O3.

JAPANESE JOURNAL OF APPLIED PHYSICS (2021)

Article Nanoscience & Nanotechnology

Thermal stability of α-Ga2O3 films grown on c-plane sapphire substrates via mist-CVD

Riena Jinno, Kentaro Kaneko, Shizuo Fujita

AIP ADVANCES (2020)

Proceedings Paper Engineering, Electrical & Electronic

VUV Cathodoluminescence Spectra of Rocksalt-structured MgZnO/MgO Quantum Wells

K. Kudo, K. Ishii, M. Ono, Y. Fujiwara, K. Kaneko, T. Yamaguchi, T. Honda, S. Fujita, T. Onuma

2019 COMPOUND SEMICONDUCTOR WEEK (CSW) (2019)

Article Materials Science, Multidisciplinary

Electrical characterization of Si-doped n-type α-Ga2O3 on sapphire substrates

Takayuki Uchida, Kentaro Kaneko, Shizuo Fujita

MRS ADVANCES (2018)

No Data Available