4.6 Article

Research on material removal model and processing parameters of cluster magnetorheological finishing with dynamic magnetic fields

Journal

INTERNATIONAL JOURNAL OF ADVANCED MANUFACTURING TECHNOLOGY
Volume 100, Issue 9-12, Pages 2283-2297

Publisher

SPRINGER LONDON LTD
DOI: 10.1007/s00170-018-2747-6

Keywords

Dynamic magnetic field; Cluster magnetorheological finishing; Plane polishing; Material removal rate model; Polishing pressure; Single-crystal silicon substrate

Funding

  1. Guangdong Provincial Science and Technology Project [2016A010102014]
  2. Guangdong Province Natural Science Foundation Project [2015A030311044]

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Based on fluid mechanics and Preston equation, the influences of various technological parameters (including rotational speeds of workpieces, magnetic poles, and polishing disk and the machining gap) on polishing pressure on workpiece surfaces were investigated. On this basis, a material removal rate (MRR) model of cluster magnetorheological finishing (CMRF) with dynamic magnetic fields was established. Moreover, three pieces of single-crystal silicon substrates were subjected to synchronous polishing on the CMRF devices with dynamic magnetic fields in order to analyze the influence of different technological parameters on the MRR. It is showed that the theoretical simulation results favorably agree with the experimental results. The single-crystal silicon substrates with the initial surface roughness (Ra) of 0.48m were polished for 5h on the optimal technological conditions: the machining gap and the eccentricity of magnetic poles are 0.9mm and 6mm, respectively; the workpieces are oscillated in Y direction for 40mm at the oscillation speed of 600mm/min; the rotational speeds of the polishing disk, magnetic poles, and workpieces are 50r/min, 90r/min, and 350r/min, respectively. In this way, the super-smooth uniform surfaces with the roughness of Ra 2.4nm were acquired.

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