Thermal Atomic Layer Etching of Silicon Using O2, HF, and Al(CH3)3 as the Reactants

Published 2018 View Full Article

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Title
Thermal Atomic Layer Etching of Silicon Using O2, HF, and Al(CH3)3 as the Reactants
Authors
Keywords
-
Journal
CHEMISTRY OF MATERIALS
Volume 30, Issue 23, Pages 8465-8475
Publisher
American Chemical Society (ACS)
Online
2018-11-06
DOI
10.1021/acs.chemmater.8b02745

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