Compact pure phase CsPbBr3 perovskite film with significantly improved stability for high-performance memory

All-inorganic perovskite had been widely used in various fields such as photodetectors, solar cells, and memory devices. In this work, the resistive switching memory with a structure of FTO/CsPbBr3/Au was fabricated by a one-step solution method under low temperature to achieve the compact CsPbBr3 film with pure phase. The device showed typical bipolar resistive switching characteristic with high ON/OFF ratio (> 10(3)), excellent endurance property, reproducibility and long data retention (> 10(3) s). Especially, the memory maintained outstanding performance without obvious degradation under high temperature and high humidity, showing notable thermal stability and environmental stability. These results demonstrate that CsPbBr3 memory has a promising application in the next-generation nonvolatile memory device.