Journal
APPLIED PHYSICS LETTERS
Volume 113, Issue 16, Pages -Publisher
AMER INST PHYSICS
DOI: 10.1063/1.5045850
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Funding
- National Key Research and Development Program of China [2017YFA0206200]
- National Natural Science Foundation of China (NSFC) [11434014, 51620105004, 51761145110, 11674373, 51701203]
- Key Research Program of Frontier Sciences [QYZDJ-SSW-SLH016]
- International Partnership Program of the Chinese Academy of Sciences (CAS) [112111KYSB20170090]
- [XDB07030200]
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Spin manipulation in magnetic materials based on spin-orbit torque gives rise to promising families of magnetic memory and logic devices. In the synthetic antiferromagnetic structure of CoFeB/Ta/CoFeB where both CoFeB layers exhibit perpendicular anisotropy, we study the magnetization switching process based on the mechanism of spin-orbit torque and interlayer exchange coupling mediated by a Ta layer. The magnetization switching trigged by in-plane current is achieved. Though the heavy metal Ta layer is ultrathin, the critical current density is 8 x 10(6)-1 x 10(7) A/cm(2) with a bias field of 5-10 mT. Meanwhile, the current induced anti-damping-like field and field-like field are determined by the harmonic lock-in technique. Harmonic results suggest that the generation efficiency of the field-like field is similar to 1.24 times that of the anti-damping-like field. The effective spin Hall angle of a Ta layer is derived to be around 0.158. Finally, we examine the magnetic properties of CoFeB layers as a function of temperature which indicates that the magnetic properties of bottom and top CoFeB layers have a close correlation with the interface quality and growth order. Published by AIP Publishing.
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