Article
Chemistry, Physical
Chun-Yuan Wang, Chun-Yi Chou, Han-Fang Shiue, Hsing-Yang Chen, Chen-Hsiang Ling, Jing-Jong Shyue, Miin-Jang Chen
Summary: In this paper, the authors investigate a method to alter the work function of TiN thin films using atomic layer annealing (ALA) technique. The results show that by incorporating layer-by-layer atomic layer deposition cycle with argon plasma treatment, the density, stoichiometry, and crystallinity of TiN thin films can be significantly improved at a low temperature of 300 degrees C, resulting in a wide tunability of the TiN metal gate's work function.
APPLIED SURFACE SCIENCE
(2022)
Article
Chemistry, Multidisciplinary
Guibai Xie, Hongwu Bai, Guanghui Miao, Guobao Feng, Jing Yang, Yun He, Xiaojun Li, Yun Li
Summary: This paper discusses the applications of ultra-thin atomic layer deposition nanofilm in the advanced aerospace manufacturing industry, which includes aluminum anti-oxidation and secondary electron suppression. The nanofilm shows potential for promoting system performance and resource consumption in the industry.
Article
Materials Science, Ceramics
Jeong Woo Shin, Jaehyeong Lee, Keunhoi Kim, Chansong Kwon, Young Bin Park, Heesung Park, Kwanlae Kim, Hyo Suk Ahn, Dongha Shim, Jihwan An
Summary: The study investigated the effect of nitrogen plasma parameters on TiN films processed by PEALD, revealing that highly dense and crystallized TiN films with improved adhesion can be deposited at higher nitrogen plasma power and longer plasma exposure time during the process.
CERAMICS INTERNATIONAL
(2022)
Article
Chemistry, Physical
Hwan Oh, Jung-Sik Kim, Hannah R. M. Margavio, Gregory N. Parsons
Summary: In this work, the researchers successfully achieved multi-material ASD by sequentially combining two intrinsic ASD processes. They also found that the properties of PEDOT and W ASD materials are affected by the ASD sequence. Additionally, they demonstrated the feasibility of orthogonal ASD at the nanoscale and showed that the PEDOT layer can control the lateral growth of W onto the non-growth surface.
CHEMISTRY OF MATERIALS
(2023)
Article
Chemistry, Physical
Xiao-Ying Zhang, Duan-Chen Peng, Jing Han, Fang-Bin Ren, Shi-Cong Jiang, Ming-Chun Tseng, Yu-Jiao Ruan, Juan Zuo, Wan-Yu Wu, Dong-Sing Wuu, Chien-Jung Huang, Shui-Yang Lien, Wen-Zhang Zhu
Summary: Aluminum nitride (AlN) thin films with considerable properties were prepared using remote plasma atomic layer deposition (RP-ALD). The properties of AlN films with different growth temperatures were studied, and the characteristics of AlN/GaN and AlN/Al2O3 interfaces were analyzed on sapphire substrates. The experimental results showed that crystal AlN films with a hexagonal wurtzite structure were obtained at 250 degrees C. X-ray photoelectron spectroscopy confirmed the presence of Al-O, Al-O-N complexes, and Al-Al metallic aluminum bonds in the AlN films. High-resolution transmission electron microscopy revealed sharp interfaces of AlN/Al2O3 and AlN/GaN. Photoluminescence measurements confirmed that the AlN buffer layer enhances the quality of GaN grown on sapphire substrates. The high-quality AlN/GaN layers prepared by RP-ALD provide a promising pathway for high-quality GaN-based devices.
SURFACES AND INTERFACES
(2023)
Article
Chemistry, Physical
Yuanyuan Zhu, Zhongchao Zhou, Xu Zhang, Rui Xu, Yongjia Wang, Lina Xu, Hongping Xiao, Xinhua Li, Aidong Li, Guoyong Fang
Summary: Atomic layer deposition (ALD) is an excellent technology used for various nanomaterials preparation in different fields. The ALD of titanium nitride (TiN) using tetra(dimethylamino)titanium (TDMAT) and ammonia as precursors was investigated. The reaction mechanism involved two reactions, the TDMAT reaction and NH3 reaction, which produced thermodynamically and kinetically favorable surface reactions. These insights into ALD of TiN provide guidance for precursor design and ALD growth of other compounds.
SURFACES AND INTERFACES
(2023)
Article
Engineering, Electrical & Electronic
Chun-Yuan Wang, Chin- Wang, Sheng-Han Yi, Teng-Jan Chang, Chun-Yi Chou, Yu-Tung Yin, Hsin-Chih Lin, Miin-Jang Chen
Summary: The crystalline phases and dielectric properties of ZrO2 thin films can be tailored by capping a nanoscale TiN layer prepared by plasma-enhanced atomic layer deposition. The in-plane tensile strain induced by the TiN capping layer leads to a dramatic paraelectric-to-antiferroelectric phase transformation in ZrO2 and a significant capacitance enhancement. This study demonstrates that the as-deposited TiN capping layer can effectively modulate the dielectric properties of nanoscale thin films without postannealing treatment, benefiting various applications such as supercapacitors and nanoelectronics.
ACS APPLIED ELECTRONIC MATERIALS
(2021)
Article
Nanoscience & Nanotechnology
Felix Blendinger, Daniel Seitz, Andreas Ottenschlager, Monika Fleischer, Volker Bucher
Summary: TiO2 thin films deposited on PEEK using PEALD method show promising osteogenic properties, enhancing the bioactivity of the implants effectively.
ACS APPLIED MATERIALS & INTERFACES
(2021)
Article
Biochemistry & Molecular Biology
Elina Kylmaoja, Jani Holopainen, Faleh Abushahba, Mikko Ritala, Juha Tuukkanen
Summary: Hydroxyapatite (HA) coatings prepared using atomic layer deposition (ALD) show good biocompatibility in terms of cell adhesion and viability, opening up new possibilities for developing improved implant coatings.
Article
Engineering, Chemical
Jeanne Casetta, Danae Gonzalez Ortiz, Celine Pochat-Bohatier, Mikhael Bechelany, Philippe Miele
Summary: By depositing titanium dioxide (TiO2) on polysulfone hollow fiber (HF) membranes via atomic layer deposition (ALD), the hydrophilicity and fouling resistance of the PSF HF membranes were improved, leading to increased water permeability and reduced pore size.
SEPARATION AND PURIFICATION TECHNOLOGY
(2023)
Article
Biochemistry & Molecular Biology
Shicong Jiang, Wan-Yu Wu, Fangbin Ren, Chia-Hsun Hsu, Xiaoying Zhang, Peng Gao, Dong-Sing Wuu, Chien-Jung Huang, Shui-Yang Lien, Wenzhang Zhu
Summary: The application of (In, Al, Ga)N materials in photovoltaic devices has attracted much attention. However, to deposit high-quality GaN material as a foundation is essential. Plasma-enhanced atomic layer deposition (PEALD) combines the advantages of ALD process with plasma utilization and has been used to deposit thin films with various requirements. In this study, NH3-containing plasma was used to eliminate the residual oxygen during the growth of GaN films, which significantly improved the quality of the films. The plasma power controlled NH2, NH, and H radicals showed strong influence on the oxygen content, growth rate, crystallinity, and surface roughness of the GaN films.
INTERNATIONAL JOURNAL OF MOLECULAR SCIENCES
(2022)
Article
Chemistry, Physical
Hong Keun Chung, Sung Ok Won, Yongjoo Park, Jin-Sang Kim, Tae Joo Park, Seong Keun Kim
Summary: TiO2 films were deposited by Atomic Layer Deposition (ALD) using (CpMe5)Ti(OMe)(3) as precursor and O-3 as co-reactant, showing high thermal stability and a wide temperature range. With increasing growth temperature, impurity content decreased, grain size reduced, and a uniform morphology with fine grains was achieved at temperatures above 300 degrees C.
APPLIED SURFACE SCIENCE
(2021)
Article
Materials Science, Multidisciplinary
Wei-Hao Lee, Fong-Jyun Jhong, Yu-Tung Yin, Chun-Yi Chou, Jing-Jong Shyue, Miin-Jang Chen
Summary: This paper reports on the significant enhancement of the crystalline quality of nanoscale GaN thin films using a large-area and rapid electron beam annealing technique. The results demonstrate high-quality GaN epilayers with smooth surfaces, indicating potential for various applications.
MATERIALS RESEARCH BULLETIN
(2022)
Article
Materials Science, Multidisciplinary
Lauri Palmolahti, Harri Ali-Loytty, Markku Hannula, Jesse Saari, Weimin Wang, Antti Tukiainen, Kimmo Lahtonen, Mika Valden
Summary: This study investigated the effect of growth temperature on precursor traces in ALD TiO2 films and thermally-induced processes, demonstrating that increasing growth temperature reduced N bearing precursor traces and made TiO2 more easily reducible. Vacuum annealing of TiO2 influenced crystallization and defect formation, with different nitrogen content resulting in different crystalline forms.
Article
Chemistry, Multidisciplinary
Daying Guo, Zhihao Zeng, Zhixin Wan, Yan Li, Bin Xi, Chengxin Wang
Summary: An active and durable CoN-containing oxygen evolution reaction (OER) electrocatalyst was reported, functioning efficiently in a neutral medium. The synthesized composite material, (N, S)-RGO@CoN, showed excellent OER performance in a neutral electrolyte, with uniform growth and strong chemical coupling of nanostructured CoN on the (N, S)-RGO matrix. Both experimental studies and density functional theory calculations supported the remarkable OER activity mechanism of ALD CoN electronic coupling to the carbon substrate.
ADVANCED FUNCTIONAL MATERIALS
(2021)
Article
Physics, Multidisciplinary
Ge Yang, A. Fragner, G. Koolstra, L. Ocola, D. A. Czaplewski, R. J. Schoelkopf, D. I. Schuster
Article
Multidisciplinary Sciences
H. Bernien, B. Hensen, W. Pfaff, G. Koolstra, M. S. Blok, L. Robledo, T. H. Taminiau, M. Markham, D. J. Twitchen, L. Childress, R. Hanson
Article
Physics, Multidisciplinary
Samuel J. Whiteley, Gary Wolfowicz, Christopher P. Anderson, Alexandre Bourassa, He Ma, Meng Ye, Gerwin Koolstra, Kevin J. Satzinger, Martin V. Holt, F. Joseph Heremans, Andrew N. Cleland, David I. Schuster, Giulia Galli, David D. Awschalom
Article
Multidisciplinary Sciences
Gerwin Koolstra, Ge Yang, David Schuster
NATURE COMMUNICATIONS
(2019)
Article
Multidisciplinary Sciences
Xianjing Zhou, Gerwin Koolstra, Xufeng Zhang, Ge Yang, Xu Han, Brennan Dizdar, Xinhao Li, Ralu Divan, Wei Guo, Kater W. Murch, David I. Schuster, Dafei Jin
Summary: This study presents an experimental realization of a qubit platform based on isolated single electrons trapped on an ultraclean solid neon surface. By integrating an electron trap in a circuit quantum electrodynamics architecture, strong coupling between a single electron and a single microwave photon is achieved. The results indicate that the electron-on-solid-neon qubit performs near the state of the art for a charge qubit.
Article
Physics, Multidisciplinary
G. Koolstra, N. Stevenson, S. Barzili, L. Burns, K. Siva, S. Greenfield, W. Livingston, A. Hashim, R. K. Naik, J. M. Kreikebaum, K. P. O'Brien, D. Santiago, J. Dressel, I Siddiqi
Summary: In this study, we propose an alternative method to accurately track the trajectories of rapidly driven superconducting qubits using a long short-term memory (LSTM) artificial neural network with minimal prior information. The LSTM produces trajectories that include qubit-readout resonator correlations and can accurately reconstruct the evolution of an unknown drive.
Review
Quantum Science & Technology
Long B. Nguyen, Gerwin Koolstra, Yosep Kim, Alexis Morvan, Trevor Chistolini, Shraddha Singh, Konstantin N. Nesterov, Christian Junger, Larry Chen, Zahra Pedramrazi, Bradley K. Mitchell, John Mark Kreikebaum, Shruti Puri, David Santiago, Irfan Siddiqi
Summary: This study presents a blueprint for a high-performance fluxonium-based quantum processor that addresses challenges such as frequency crowding, quantum and classical crosstalk. The architecture includes high-anharmonicity circuits, multipath couplers, circuit designs compatible with multiplexed microwave circuitry, and strongly coupled readout channels that do not require complex elements to maintain coherence. Additionally, the study explores robust and resource-efficient protocols for quantum logical operations and provides numerical simulations to validate the expected performance of the proposed processor.
Article
Quantum Science & Technology
Elie Genois, Jonathan A. Gross, Agustin Di Paolo, Noah J. Stevenson, Gerwin Koolstra, Akel Hashim, Irfan Siddiqi, Alexandre Blais
Summary: By incorporating features of quantum mechanics, the ML approach in this study outperformed generic models in characterizing the dynamics of a quantum device and learning device parameters. Leveraging domain knowledge improved the accuracy and efficiency of the characterization task significantly.
