Journal
APPLIED PHYSICS LETTERS
Volume 113, Issue 17, Pages -Publisher
AMER INST PHYSICS
DOI: 10.1063/1.5046139
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- Federal Ministry of Education and Research in Germany [03VP03711]
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In this study, we report on the application of multiple energy nitrogen ion implantation for the electrical isolation of electronic devices on monoclinic beta-Ga2O3. By the introduction of uniformly distributed midgap damage-related levels in the Ga2O3 crystal lattice, we are able to increase the sheet resistances by more than 9 orders of magnitude to >= 10(13) Omega/sq which remains stable up to annealing temperatures of 600 degrees C carried out for 60 s under a nitrogen atmosphere. At higher annealing temperatures, the damage-related trap levels are being removed causing a significant drop of the sheet resistance down to 4 x 10(5) Omega/sq for annealing temperatures of 800 degrees C. This effect is preceded by a structural recovery of the implantation damages via the recrystallization of the crystal lattice at already 400 degrees C as verified by x-ray diffraction measurements. The extracted activation energies of the deep states controlling the high resistivity of Ga2O3 after implantation are in the range of 0.7 eV, showing a strong correlation with the annealing temperature dependence of the sheet resistance and thus supporting the theory of a damage-induced isolation mechanism. Published by AIP Publishing.
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